Process Of Bonding Copper And Tungsten
Abstract
Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.
- Inventors:
-
- St. Charles, MO
- Manchester, MO
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 879447
- Patent Number(s):
- 5988488
- Application Number:
- 08/921571
- Assignee:
- McDonnell Douglas Corporation (St. Louis, MO)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B23 - MACHINE TOOLS B23K - SOLDERING OR UNSOLDERING
B - PERFORMING OPERATIONS B32 - LAYERED PRODUCTS B32B - LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- DOE Contract Number:
- AC-3013
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Slattery, Kevin T, and Driemeyer, Daniel E. Process Of Bonding Copper And Tungsten. United States: N. p., 1999.
Web.
Slattery, Kevin T, & Driemeyer, Daniel E. Process Of Bonding Copper And Tungsten. United States.
Slattery, Kevin T, and Driemeyer, Daniel E. Tue .
"Process Of Bonding Copper And Tungsten". United States. https://www.osti.gov/servlets/purl/879447.
@article{osti_879447,
title = {Process Of Bonding Copper And Tungsten},
author = {Slattery, Kevin T and Driemeyer, Daniel E},
abstractNote = {Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {11}
}