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Title: Process Of Bonding Copper And Tungsten

Abstract

Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

Inventors:
 [1];  [2]
  1. St. Charles, MO
  2. Manchester, MO
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
879447
Patent Number(s):
5988488
Application Number:
08/921571
Assignee:
McDonnell Douglas Corporation (St. Louis, MO)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC-3013
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Slattery, Kevin T, and Driemeyer, Daniel E. Process Of Bonding Copper And Tungsten. United States: N. p., 1999. Web.
Slattery, Kevin T, & Driemeyer, Daniel E. Process Of Bonding Copper And Tungsten. United States.
Slattery, Kevin T, and Driemeyer, Daniel E. Tue . "Process Of Bonding Copper And Tungsten". United States. https://www.osti.gov/servlets/purl/879447.
@article{osti_879447,
title = {Process Of Bonding Copper And Tungsten},
author = {Slattery, Kevin T and Driemeyer, Daniel E},
abstractNote = {Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {11}
}

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