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Title: Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.

Abstract

High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Inventors:
 [1];  [1];  [2]
  1. (Langhorne, PA)
  2. (Plainsboro, NJ)
Issue Date:
OSTI Identifier:
879407
Patent Number(s):
5942049
Application Number:
08/820431
Assignee:
Amoco/Enron Solar (Frederick, MD) OSTI
DOE Contract Number:  
ZAN-4-13318-01
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Li, Yaun-Min, Bennett, Murray S., and Yang, Liyou. Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.. United States: N. p., 1999. Web.
Li, Yaun-Min, Bennett, Murray S., & Yang, Liyou. Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.. United States.
Li, Yaun-Min, Bennett, Murray S., and Yang, Liyou. Tue . "Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.". United States. https://www.osti.gov/servlets/purl/879407.
@article{osti_879407,
title = {Increasing Stabilized Performance Of Amorphous Silicon Based Devices Produced By Highly Hydrogen Diluted Lower Temperature Plasma Deposition.},
author = {Li, Yaun-Min and Bennett, Murray S. and Yang, Liyou},
abstractNote = {High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {8}
}

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