Photovoltaic Cell And Manufacturing Process
Abstract
Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.
- Inventors:
-
- Lakewood, CO
- El Paso, TX
- Issue Date:
- OSTI Identifier:
- 879317
- Patent Number(s):
- 5578502
- Application Number:
- 08/572088
- Assignee:
- Photon Energy Inc. (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- NREL-ZN-0-190-19-1
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Albright, Scot P, and Chamberlin, Rhodes R. Photovoltaic Cell And Manufacturing Process. United States: N. p., 1996.
Web.
Albright, Scot P, & Chamberlin, Rhodes R. Photovoltaic Cell And Manufacturing Process. United States.
Albright, Scot P, and Chamberlin, Rhodes R. Tue .
"Photovoltaic Cell And Manufacturing Process". United States. https://www.osti.gov/servlets/purl/879317.
@article{osti_879317,
title = {Photovoltaic Cell And Manufacturing Process},
author = {Albright, Scot P and Chamberlin, Rhodes R},
abstractNote = {Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {11}
}
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