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Title: Photovoltaic Cell And Manufacturing Process

Abstract

Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.

Inventors:
 [1];  [2]
  1. Lakewood, CO
  2. El Paso, TX
Issue Date:
OSTI Identifier:
879317
Patent Number(s):
5578502
Application Number:
08/572088
Assignee:
Photon Energy Inc. (Golden, CO)
DOE Contract Number:  
NREL-ZN-0-190-19-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Albright, Scot P, and Chamberlin, Rhodes R. Photovoltaic Cell And Manufacturing Process. United States: N. p., 1996. Web.
Albright, Scot P, & Chamberlin, Rhodes R. Photovoltaic Cell And Manufacturing Process. United States.
Albright, Scot P, and Chamberlin, Rhodes R. Tue . "Photovoltaic Cell And Manufacturing Process". United States. https://www.osti.gov/servlets/purl/879317.
@article{osti_879317,
title = {Photovoltaic Cell And Manufacturing Process},
author = {Albright, Scot P and Chamberlin, Rhodes R},
abstractNote = {Provided is a method for controlling electrical properties and morphology of a p-type material of a photovoltaic device. The p-type material, such as p-type cadmium telluride, is first subjected to heat treatment in an oxidizing environment, followed by recrystallization in an environment substantially free of oxidants. In one embodiment, the heat treatment step comprises first subjecting the p-type material to an oxidizing atmosphere at a first temperature to getter impurities, followed by second subjecting the p-type material to an oxidizing atmosphere at a second temperature, higher than the first temperature, to develop a desired oxidation gradient through the p-type material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {11}
}

Patent:

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