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Title: M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features

Abstract

Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, andmore » a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.« less

Inventors:
 [1];  [1];  [1];  [2]
  1. Albuquerque, NM
  2. Los Gatos, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
879258
Patent Number(s):
5759744
Application Number:
08/407067
Assignee:
University of New Mexico (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Brueck, Steven R.J., Chen, Xiaolan, Zaidi, Saleem, and Devine, Daniel J. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features. United States: N. p., 1998. Web.
Brueck, Steven R.J., Chen, Xiaolan, Zaidi, Saleem, & Devine, Daniel J. M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features. United States.
Brueck, Steven R.J., Chen, Xiaolan, Zaidi, Saleem, and Devine, Daniel J. Tue . "M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features". United States. https://www.osti.gov/servlets/purl/879258.
@article{osti_879258,
title = {M&A For Lithography Of Sparse Arrays Of Sub-Micrometer Features},
author = {Brueck, Steven R.J. and Chen, Xiaolan and Zaidi, Saleem and Devine, Daniel J},
abstractNote = {Methods and apparatuses are disclosed for the exposure of sparse hole and/or mesa arrays with line:space ratios of 1:3 or greater and sub-micrometer hole and/or mesa diameters in a layer of photosensitive material atop a layered material. Methods disclosed include: double exposure interferometric lithography pairs in which only those areas near the overlapping maxima of each single-period exposure pair receive a clearing exposure dose; double interferometric lithography exposure pairs with additional processing steps to transfer the array from a first single-period interferometric lithography exposure pair into an intermediate mask layer and a second single-period interferometric lithography exposure to further select a subset of the first array of holes; a double exposure of a single period interferometric lithography exposure pair to define a dense array of sub-micrometer holes and an optical lithography exposure in which only those holes near maxima of both exposures receive a clearing exposure dose; combination of a single-period interferometric exposure pair, processing to transfer resulting dense array of sub-micrometer holes into an intermediate etch mask, and an optical lithography exposure to select a subset of initial array to form a sparse array; combination of an optical exposure, transfer of exposure pattern into an intermediate mask layer, and a single-period interferometric lithography exposure pair; three-beam interferometric exposure pairs to form sparse arrays of sub-micrometer holes; five- and four-beam interferometric exposures to form a sparse array of sub-micrometer holes in a single exposure. Apparatuses disclosed include arrangements for the three-beam, five-beam and four-beam interferometric exposures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {6}
}

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