Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

Albright, Scot P; Chamberlin, Rhodes R

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Title: Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

Abstract

A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

Inventors:

Albright, Scot P ^[1]; Chamberlin, Rhodes R ^[2]

Lakewood, CO
El Paso, TX

Issue Date:: Tue Mar 26 00:00:00 EST 1996

OSTI Identifier:: 879235

Patent Number(s):: 5501744

Application Number:: 08/274574

Assignee:: Photon Energy, Inc. (Golden, CO)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02008 - {for solar cells or solar cell modules}
H01L31/022425 - {for solar cells}
H01L31/022466 - {made of transparent conductive layers, e.g. TCO, ITO layers}
H01L31/046 - PV modules composed of a plurality of thin film solar cells deposited on the same substrate
H01L31/073 - comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
H01L31/1828 - {the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe}
H01L31/1836 - {comprising a growth substrate not being an AIIBVI compound}
H01L31/1864 - {Annealing}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/543 - Solar cells from Group II-VI materials

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S438/92 - Controlling diffusion profile by oxidation
Y10S438/96 - Porous semiconductor

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DOE Contract Number:: NREL-ZN-0-119019-1

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Albright, Scot P, and Chamberlin, Rhodes R. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals.  United States: N. p., 1996. 
        Web.

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                    Albright, Scot P, & Chamberlin, Rhodes R. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals.  United States.

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                    Albright, Scot P, and Chamberlin, Rhodes R. Tue .  
        "Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals".  United States.  https://www.osti.gov/servlets/purl/879235.

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@article{osti_879235,

  title        = {Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals},

  author       = {Albright, Scot P and Chamberlin, Rhodes R},

  abstractNote = {A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Mar 26 00:00:00 EST 1996},

  month        = {Tue Mar 26 00:00:00 EST 1996}

}

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Works referenced in this record:

Influence of interface on the electrical behaviour of CdSeCdTe photovoltaic cells
journal, December 1988

Tsurkan, A. E.; Shemyakova, T. D.; Medvetskii, S. P.
Solar Energy Materials, Vol. 18, Issue 1-2
https://doi.org/10.1016/0165-1633(88)90045-7

Screen Printed Thin Film CdS/CdTe Solar Cell
journal, April 1980

Nakayama, Nobuo; Matsumoto, Hitoshi; Nakano, Akihiko
Japanese Journal of Applied Physics, Vol. 19, Issue 4
https://doi.org/10.1143/JJAP.19.703

Preparation of Low Resistance Contact Electrode in Screen Printed CdS/CdTe Solar Cell
journal, December 1983

Kuribayashi, Kiyoshi; Matsumoto, Hitoshi; Uda, Hiroshi
Japanese Journal of Applied Physics, Vol. 22, Issue Part 1, No. 12
https://doi.org/10.1143/JJAP.22.1828

Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells
journal, May 1991

Rohatgi, A.; Sudharsanan, R.; Ringel, S. A.
Solar Cells, Vol. 30, Issue 1-4
https://doi.org/10.1016/0379-6787(91)90043-O

CdS/CdTe solar cells by the screen-printing-sintering technique: Fabrication, photovoltaic properties and applications
journal, January 1988

Ikegami, Seiji
Solar Cells, Vol. 23, Issue 1-2
https://doi.org/10.1016/0379-6787(88)90009-9

Large-area CdS/CdTe photovoltaic cells
journal, January 1988

Jordan, John F.; Albright, Scot P.
Solar Cells, Vol. 23, Issue 1-2
https://doi.org/10.1016/0379-6787(88)90010-5

Analysis of post deposition processing for CdTe/CdS thin film solar cells
journal, December 1991

McCandless, Brian E.; Birkmire, Robert W.
Solar Cells, Vol. 31, Issue 6
https://doi.org/10.1016/0379-6787(91)90095-7

Effect of Resistivity of CdS Sintered Film on Photovoltaic Properties of Screen-Printed CdS/CdTe Solar Cell
journal, December 1983

Uda, Hiroshi; Matsumoto, Hitoshi; Kuribayashi, Kiyoshi
Japanese Journal of Applied Physics, Vol. 22, Issue Part 1, No. 12
https://doi.org/10.1143/JJAP.22.1832

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Similar Records

Title: Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

Abstract

Citation Formats

Influence of interface on the electrical behaviour of CdSeCdTe photovoltaic cells journal, December 1988

Screen Printed Thin Film CdS/CdTe Solar Cell journal, April 1980

Preparation of Low Resistance Contact Electrode in Screen Printed CdS/CdTe Solar Cell journal, December 1983

Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells journal, May 1991

CdS/CdTe solar cells by the screen-printing-sintering technique: Fabrication, photovoltaic properties and applications journal, January 1988

Large-area CdS/CdTe photovoltaic cells journal, January 1988

Analysis of post deposition processing for CdTe/CdS thin film solar cells journal, December 1991

Effect of Resistivity of CdS Sintered Film on Photovoltaic Properties of Screen-Printed CdS/CdTe Solar Cell journal, December 1983

Influence of interface on the electrical behaviour of CdSeCdTe photovoltaic cells
journal, December 1988

Screen Printed Thin Film CdS/CdTe Solar Cell
journal, April 1980

Preparation of Low Resistance Contact Electrode in Screen Printed CdS/CdTe Solar Cell
journal, December 1983

Growth and process optimization of CdTe and CdZnTe polycrystalline films for high efficiency solar cells
journal, May 1991

CdS/CdTe solar cells by the screen-printing-sintering technique: Fabrication, photovoltaic properties and applications
journal, January 1988

Large-area CdS/CdTe photovoltaic cells
journal, January 1988

Analysis of post deposition processing for CdTe/CdS thin film solar cells
journal, December 1991

Effect of Resistivity of CdS Sintered Film on Photovoltaic Properties of Screen-Printed CdS/CdTe Solar Cell
journal, December 1983