Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals
Abstract
A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.
- Inventors:
-
- Lakewood, CO
- El Paso, TX
- Issue Date:
- OSTI Identifier:
- 879235
- Patent Number(s):
- 5501744
- Application Number:
- 08/274574
- Assignee:
- Photon Energy, Inc. (Golden, CO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- NREL-ZN-0-119019-1
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Albright, Scot P, and Chamberlin, Rhodes R. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals. United States: N. p., 1996.
Web.
Albright, Scot P, & Chamberlin, Rhodes R. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals. United States.
Albright, Scot P, and Chamberlin, Rhodes R. Tue .
"Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals". United States. https://www.osti.gov/servlets/purl/879235.
@article{osti_879235,
title = {Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals},
author = {Albright, Scot P and Chamberlin, Rhodes R},
abstractNote = {A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {3}
}
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