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Title: Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals

Abstract

A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.

Inventors:
 [1];  [2]
  1. Lakewood, CO
  2. El Paso, TX
Issue Date:
OSTI Identifier:
879235
Patent Number(s):
5501744
Application Number:
08/274574
Assignee:
Photon Energy, Inc. (Golden, CO)
DOE Contract Number:  
NREL-ZN-0-119019-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Albright, Scot P, and Chamberlin, Rhodes R. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals. United States: N. p., 1996. Web.
Albright, Scot P, & Chamberlin, Rhodes R. Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals. United States.
Albright, Scot P, and Chamberlin, Rhodes R. Tue . "Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals". United States. https://www.osti.gov/servlets/purl/879235.
@article{osti_879235,
title = {Photovoltaic Cell Having A P-Type Polycrystalline Layer With Large Crystals},
author = {Albright, Scot P and Chamberlin, Rhodes R},
abstractNote = {A photovoltaic cell has an n-type polycrystalline layer and a p-type polycrystalline layer adjoining the n-type polycrystalline layer to form a photovoltaic junction. The p-type polycrystalline layer comprises a substantially planar layer portion having relatively large crystals adjoining the n-type polycrystalline layer. The planar layer portion includes oxidized impurities which contribute to obtainment of p-type electrical properties in the planar layer portion.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {3}
}

Patent:

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