Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer
Abstract
A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.
- Inventors:
-
- Lawrenceville, NJ
- Issue Date:
- OSTI Identifier:
- 879182
- Patent Number(s):
- 5256887
- Application Number:
- 07/733172
- Assignee:
- Solarex Corporation (Rockville, MD)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- NREL-ZM-0-19033-1
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer. United States: N. p., 1993.
Web.
Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer. United States.
Yang, Liyou. Tue .
"Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer". United States. https://www.osti.gov/servlets/purl/879182.
@article{osti_879182,
title = {Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer},
author = {Yang, Liyou},
abstractNote = {A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}
Works referenced in this record:
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journal, November 1983
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High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates
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Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers
journal, October 1984
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Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles
journal, January 1985
- Moeller, M.; Kausche, H.; Guenzel, E.
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Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells
journal, August 1983
- Moustakas, T. D.; Maruska, H. P.; Friedman, R.
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