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Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.
Inventors:
 [1]
  1. (Lawrenceville, NJ)
Issue Date:
OSTI Identifier:
879182
Assignee:
Solarex Corporation (Rockville, MD) OSTI
Patent Number(s):
US 5256887
Application Number:
07/733172
Contract Number:
NREL-ZM-0-19033-1
Country of Publication:
United States
Language:
English