Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

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A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Inventors:

Yang, Liyou ^[1]

(Lawrenceville, NJ)

Issue Date:: 1993-10-26

OSTI Identifier:: 879182

Assignee:: Solarex Corporation (Rockville, MD) OSTI

Patent Number(s):: US 5256887

Application Number:: 07/733172

Contract Number:: NREL-ZM-0-19033-1

Country of Publication:: United States

Language:: English

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