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Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Abstract

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Inventors:
 [1]
  1. Lawrenceville, NJ
Issue Date:
OSTI Identifier:
879182
Patent Number(s):
5256887
Application Number:
07/733172
Assignee:
Solarex Corporation (Rockville, MD)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
NREL-ZM-0-19033-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer. United States: N. p., 1993. Web.
Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer. United States.
Yang, Liyou. Tue . "Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer". United States. https://www.osti.gov/servlets/purl/879182.
@article{osti_879182,
title = {Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer},
author = {Yang, Liyou},
abstractNote = {A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}

Works referenced in this record:

Amorphous silicon solar cells with graded boron‐doped active layers
journal, November 1983


High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates
journal, June 1984


Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers
journal, October 1984


Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles
journal, January 1985


Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells
journal, August 1983