Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

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Abstract

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Inventors:

Yang, Liyou ^[1]

Lawrenceville, NJ

Issue Date:: 1993-10-26

OSTI Identifier:: 879182

Patent Number(s):: 5256887

Application Number:: 07/733172

Assignee:: Solarex Corporation (Rockville, MD)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/075 - the potential barriers being only of the PIN type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

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DOE Contract Number:: NREL-ZM-0-19033-1

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer.  United States: N. p., 1993. 
        Web.

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                    Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer.  United States.

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                    Yang, Liyou. Tue .  
        "Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer".  United States.  https://www.osti.gov/servlets/purl/879182.

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@article{osti_879182,

  title        = {Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer},

  author       = {Yang, Liyou},

  abstractNote = {A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1993},

  month        = {10}

}

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