Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Yang, Liyou

Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Abstract

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Inventors:

Yang, Liyou ^[1]

Lawrenceville, NJ

Issue Date:: 1993-10-26

OSTI Identifier:: 879182

Patent Number(s):: 5256887

Application Number:: 07/733172

Assignee:: Solarex Corporation (Rockville, MD)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/075 - the potential barriers being only of the PIN type

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/548 - Amorphous silicon PV cells

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DOE Contract Number:: NREL-ZM-0-19033-1

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Citation Formats


                    Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer.  United States: N. p., 1993. 
        Web.

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                    Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer.  United States.

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                    Yang, Liyou. Tue .  
        "Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer".  United States.  https://www.osti.gov/servlets/purl/879182.

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@article{osti_879182,

  title        = {Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer},

  author       = {Yang, Liyou},

  abstractNote = {A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1993},

  month        = {10}

}

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Works referenced in this record:

Amorphous silicon solar cells with graded boron‐doped active layers
journal, November 1983

Sichanugrist, Porponth; Kumada, Masatoshi; Konagai, Makoto
Journal of Applied Physics, Vol. 54, Issue 11
https://doi.org/10.1063/1.331857

High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates
journal, June 1984

Matsushita, Tsutomu; Komori, Koichiro; Konagai, Makoto
Applied Physics Letters, Vol. 44, Issue 11
https://doi.org/10.1063/1.94625

Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers
journal, October 1984

Sichanugrist, Porponth; Konagai, Makoto; Takahashi, Kiyoshi
Solar Energy Materials, Vol. 11, Issue 1-2
https://doi.org/10.1016/0165-1633(84)90026-1

Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles
journal, January 1985

Moeller, M.; Kausche, H.; Guenzel, E.
MRS Proceedings, Vol. 49
https://doi.org/10.1557/PROC-49-325

Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells
journal, August 1983

Moustakas, T. D.; Maruska, H. P.; Friedman, R.
Applied Physics Letters, Vol. 43, Issue 4
https://doi.org/10.1063/1.94340

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Similar Records

Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Abstract

Citation Formats

Amorphous silicon solar cells with graded boron‐doped active layers journal, November 1983

High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates journal, June 1984

Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers journal, October 1984

Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles journal, January 1985

Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells journal, August 1983

Amorphous silicon solar cells with graded boron‐doped active layers
journal, November 1983

High performance hydrogenated amorphous Si solar cells with graded boron‐doped intrinsic layers prepared from disilane at high deposition rates
journal, June 1984

Modeling and experimental performance of amorphous silicon solar cells with graded boron-doped active layers
journal, October 1984

Enhanced Stability of Amorphous Silicon Pin Solar Cells by Doping Profiles
journal, January 1985

Effect of boron compensation on the photovoltaic properties of amorphous silicon solar cells
journal, August 1983