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Title: Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer

Abstract

A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.

Inventors:
 [1]
  1. Lawrenceville, NJ
Issue Date:
OSTI Identifier:
879182
Patent Number(s):
5256887
Application Number:
07/733172
Assignee:
Solarex Corporation (Rockville, MD)
DOE Contract Number:  
NREL-ZM-0-19033-1
Resource Type:
Patent
Country of Publication:
United States
Language:
English

Citation Formats

Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer. United States: N. p., 1993. Web.
Yang, Liyou. Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer. United States.
Yang, Liyou. Tue . "Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer". United States. https://www.osti.gov/servlets/purl/879182.
@article{osti_879182,
title = {Photovoltaic Device Including A Boron Doping Profile In An I-Type Layer},
author = {Yang, Liyou},
abstractNote = {A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1993},
month = {10}
}

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