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Title: Impurity gettering in semiconductors

A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device is disclosed. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500 C to about 700 C for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal. 1 fig.
Inventors:
Issue Date:
OSTI Identifier:
87735
Assignee:
Midwest Research Inst., Kansas City, MO (United States) CHO; SCA: 426000; PA: EDB-95:119483; SN: 95001431118
Patent Number(s):
US 5,426,061/A/
Application Number:
PAN: 8-301,559
Contract Number:
AC02-83CH10093
Resource Relation:
Other Information: PBD: 20 Jun 1995
Research Org:
Midwest Research Institute
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; GETTERING; SEMICONDUCTOR MATERIALS; HYDROGENATION; HEAT TREATMENTS; TEMPERATURE RANGE 0400-1000 K

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