Global to push GA events into
skip to main content

Title: Visible light emitting vertical cavity surface emitting lasers

A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of {lambda}/2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In{sub z}(Al{sub y}Ga{sub 1{minus}y}){sub 1{minus}z}P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m {lambda}/2n{sub eff} where m is an integer and n{sub eff} is the effective index of refraction of the laser cavity, and the spacer layer and one of the mirrors being transmissive to radiation having a wavelength of {lambda}/n, typically within the green to red portion of the visible spectrum. 10 figs.
Inventors:
; ; ;
Issue Date:
OSTI Identifier:
87729
Assignee:
Dept. of Energy, Washington, DC (United States) SNL; SCA: 426002; PA: EDB-95:119500; SN: 95001431104
Patent Number(s):
US 5,428,634/A/
Application Number:
PAN: 7-972,820
Contract Number:
AC04-76DP00789
Resource Relation:
Other Information: PBD: 27 Jun 1995
Research Org:
AT&T Corporation
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR LASERS; DESIGN; LASER RADIATION; LASER MIRRORS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; GALLIUM PHOSPHIDES; ALUMINIUM PHOSPHIDES; INDIUM ARSENIDES; ALUMINIUM ARSENIDES; GALLIUM ARSENIDES