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Title: Fabrication of optically reflecting ohmic contacts for semiconductor devices

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.
Inventors:
Issue Date:
OSTI Identifier:
87726
Assignee:
Midwest Research Inst., Kansas City, MO (United States) CHO; SCA: 426000; PA: EDB-95:119490; SN: 95001431099
Patent Number(s):
US 5,429,985/A/
Application Number:
PAN: 8-155,386
Contract Number:
AC02-83CH10093
Resource Relation:
Other Information: PBD: 4 Jul 1995
Research Org:
Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; ELECTRIC CONTACTS; FABRICATION; ELECTRIC CONDUCTIVITY; THIN FILMS

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