Fabrication of optically reflecting ohmic contacts for semiconductor devices

Title: Fabrication of optically reflecting ohmic contacts for semiconductor devices

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Abstract

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

Inventors:: Sopori, B. L.

Issue Date:: 1995-07-04

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 87726

Patent Number(s):: 5429985

Application Number:: PAN: 8-155,386

Assignee:: Midwest Research Inst., Kansas City, MO (United States)

DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Resource Relation:: Other Information: PBD: 4 Jul 1995

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; ELECTRIC CONTACTS; FABRICATION; ELECTRIC CONDUCTIVITY; THIN FILMS

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                    Sopori, B. L. Fabrication of optically reflecting ohmic contacts for semiconductor devices.  United States: N. p., 1995. 
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                    Sopori, B. L. Fabrication of optically reflecting ohmic contacts for semiconductor devices.  United States.

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                    Sopori, B. L. Tue .  
        "Fabrication of optically reflecting ohmic contacts for semiconductor devices".  United States.

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@article{osti_87726,

  title        = {Fabrication of optically reflecting ohmic contacts for semiconductor devices},

  author       = {Sopori, B. L.},

  abstractNote = {A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1995},

  month        = {7}

}

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