Fabrication of optically reflecting ohmic contacts for semiconductor devices
A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.
- Issue Date:
- OSTI Identifier:
- 87726
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States) CHO; SCA: 426000; PA: EDB-95:119490; SN: 95001431099
- Patent Number(s):
- US 5,429,985/A/
- Application Number:
- PAN: 8-155,386
- Contract Number:
- AC02-83CH10093
- Resource Relation:
- Other Information: PBD: 4 Jul 1995
- Research Org:
- Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; ELECTRIC CONTACTS; FABRICATION; ELECTRIC CONDUCTIVITY; THIN FILMS