Fabrication of optically reflecting ohmic contacts for semiconductor devices
Abstract
A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.
- Inventors:
- Issue Date:
- Research Org.:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 87726
- Patent Number(s):
- 5429985
- Application Number:
- PAN: 8-155,386
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Resource Relation:
- Other Information: PBD: 4 Jul 1995
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; ELECTRIC CONTACTS; FABRICATION; ELECTRIC CONDUCTIVITY; THIN FILMS
Citation Formats
Sopori, B. L. Fabrication of optically reflecting ohmic contacts for semiconductor devices. United States: N. p., 1995.
Web.
Sopori, B. L. Fabrication of optically reflecting ohmic contacts for semiconductor devices. United States.
Sopori, B. L. Tue .
"Fabrication of optically reflecting ohmic contacts for semiconductor devices". United States.
@article{osti_87726,
title = {Fabrication of optically reflecting ohmic contacts for semiconductor devices},
author = {Sopori, B. L.},
abstractNote = {A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {7}
}
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