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Title: Fabrication of optically reflecting ohmic contacts for semiconductor devices

Abstract

A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.

Inventors:
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
87726
Patent Number(s):
5,429,985
Application Number:
PAN: 8-155,386
Assignee:
Midwest Research Inst., Kansas City, MO (United States)
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Resource Relation:
Other Information: PBD: 4 Jul 1995
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR DEVICES; ELECTRIC CONTACTS; FABRICATION; ELECTRIC CONDUCTIVITY; THIN FILMS

Citation Formats

Sopori, B L. Fabrication of optically reflecting ohmic contacts for semiconductor devices. United States: N. p., 1995. Web.
Sopori, B L. Fabrication of optically reflecting ohmic contacts for semiconductor devices. United States.
Sopori, B L. Tue . "Fabrication of optically reflecting ohmic contacts for semiconductor devices". United States.
@article{osti_87726,
title = {Fabrication of optically reflecting ohmic contacts for semiconductor devices},
author = {Sopori, B L},
abstractNote = {A method is provided to produce a low-resistivity ohmic contact having high optical reflectivity on one side of a semiconductor device. The contact is formed by coating the semiconductor substrate with a thin metal film on the back reflecting side and then optically processing the wafer by illuminating it with electromagnetic radiation of a predetermined wavelength and energy level through the front side of the wafer for a predetermined period of time. This method produces a thin epitaxial alloy layer between the semiconductor substrate and the metal layer when a crystalline substrate is used. The alloy layer provides both a low-resistivity ohmic contact and high optical reflectance. 5 figs.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1995},
month = {7}
}