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Title: Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

Abstract

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Inventors:
 [1];  [2]
  1. Bellevue, WA
  2. Seattle, WA
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
875289
Patent Number(s):
RE31,968
Assignee:
Boeing Company (Seattle, WA)
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; methods; forming; thin-film; heterojunction; solar; cells; i-iii-vi; improved; cell; relatively; light-to-electrical; energy; conversion; efficiency; characterized; comprises; p-n; type; formed; semiconductor; layer; comprising; photovoltaic; active; material; selected; chalcopyrite; ternary; materials; vacuum; deposited; composition-graded; ranging; microns; congruent; region; preferably; resistivity; p-type; superimposed; transient; n-type; defining; homojunction; ii; interdiffusion; elemental; constituents; discrete; juxtaposed; regions; causes; government; rights; pursuant; contract; eg-77-c-01-4042; subcontract; xj-9-8021-1; awarded; department; transient p-n; photovoltaic active; p-n homojunction; n-type material; material defining; layer comprising; n-type semiconductor; heterojunction solar; cell comprises; conversion efficiency; active material; electrical energy; solar cell; semiconductor material; solar cells; semiconductor layer; energy conversion; preferably comprises; material selected; material preferably; transient n-type; p-type semiconductor; vacuum deposited; resistivity n-type; resistivity region; ternary materials; thin-film heterojunction; juxtaposed regions; light-to-electrical energy; junction solar; chalcopyrite ternary; film heterojunction; elemental constituents; superimposed region; forming thin-film; layer ranging; layer defining; discrete juxtaposed; type heterojunction; homojunction layer; heterojunction formed; improved thin-film; type material; type semiconductor; preferably comprise; DESIGN; FABRICATION; ENERGY EFFICIENCY; VACUUM COATING; P-N JUNCTIONS; N-TYPE CONDUCTORS; /136/257/427/438/

Citation Formats

Mickelsen, Reid A, and Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2. United States: N. p., 1985. Web.
Mickelsen, Reid A, & Chen, Wen S. Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2. United States.
Mickelsen, Reid A, and Chen, Wen S. Tue . "Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2". United States. https://www.osti.gov/servlets/purl/875289.
@article{osti_875289,
title = {Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2},
author = {Mickelsen, Reid A and Chen, Wen S},
abstractNote = {An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1985},
month = {8}
}

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