Epitaxial strengthening of crystals

Title: Epitaxial strengthening of crystals

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Abstract

An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

Inventors:

Morris, Robert C ^[1]; Marion, II, John E. ^[2]; Gaultieri, Devlin M ^[1]

Ledgewood, NJ
(Livermore, CA)

Issue Date:: 1988-01-01

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

OSTI Identifier:: 875222

Patent Number(s):: H557

Assignee:: United States of America as represented by Department of Energy (Washington, DC)

DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: epitaxial; strengthening; crystals; layer; surface; crystal; compression; greatly; increase; durability; laser; medium; laser medium; epitaxial layer; greatly increase; /117/148/252/

Citation Formats


                    Morris, Robert C, Marion, II, John E., and Gaultieri, Devlin M. Epitaxial strengthening of crystals.  United States: N. p., 1988. 
        Web.

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                    Morris, Robert C, Marion, II, John E., & Gaultieri, Devlin M. Epitaxial strengthening of crystals.  United States.

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                    Morris, Robert C, Marion, II, John E., and Gaultieri, Devlin M. Fri .  
        "Epitaxial strengthening of crystals".  United States.  https://www.osti.gov/servlets/purl/875222.

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@article{osti_875222,

  title        = {Epitaxial strengthening of crystals},

  author       = {Morris, Robert C and Marion, II, John E. and Gaultieri, Devlin M},

  abstractNote = {An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {1}

}

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