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Title: Epitaxial strengthening of crystals

Abstract

An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.

Inventors:
 [1];  [2];  [1]
  1. (Ledgewood, NJ)
  2. (Livermore, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
875222
Patent Number(s):
H557
Assignee:
United States of America as represented by Department of Energy (Washington, DC) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
epitaxial; strengthening; crystals; layer; surface; crystal; compression; greatly; increase; durability; laser; medium; laser medium; epitaxial layer; greatly increase; /117/148/252/

Citation Formats

Morris, Robert C., Marion, II, John E., and Gaultieri, Devlin M. Epitaxial strengthening of crystals. United States: N. p., 1988. Web.
Morris, Robert C., Marion, II, John E., & Gaultieri, Devlin M. Epitaxial strengthening of crystals. United States.
Morris, Robert C., Marion, II, John E., and Gaultieri, Devlin M. Fri . "Epitaxial strengthening of crystals". United States. https://www.osti.gov/servlets/purl/875222.
@article{osti_875222,
title = {Epitaxial strengthening of crystals},
author = {Morris, Robert C. and Marion, II, John E. and Gaultieri, Devlin M.},
abstractNote = {An epitaxial layer is used to place the surface of a crystal in compression o as to greatly increase the durability of the crystal such as a laser medium crystal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {1}
}

Patent:

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