Formation of thin-film resistors on silicon substrates
Abstract
The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.
- Inventors:
-
- Montgomery County, PA
- Hamilton Township, Mercer County, NJ
- Issue Date:
- Research Org.:
- United States Air Force (USAF), Washington, DC (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 875220
- Patent Number(s):
- H000546
- Application Number:
- 02/716,089
- Assignee:
- United States of America as represented by Secretary of Air (Washington, DC)
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 1988 Feb 26
- Country of Publication:
- United States
- Language:
- English
- Subject:
- statutory invention registration; formation; thin-film; resistors; silicon; substrates; implantation; metallic; conductive; layer; surface; phosphosilicate; glass; borophosphosilicate; deposited; substrate; materials; comprise; consisting; tantalum; ruthenium; rhodium; platinum; chromium; silicide; resistor; formed; annealed; prior; deposition; metal; aluminum; silicon substrates; silicon substrate; conductive layer; silicate glass; thin-film resistors; film resistor; materials comprise; layer material; film resistors; layer materials; /438/
Citation Formats
Schnable, George L., and Wu, Chung P. Formation of thin-film resistors on silicon substrates. United States: N. p., 1988.
Web.
Schnable, George L., & Wu, Chung P. Formation of thin-film resistors on silicon substrates. United States.
Schnable, George L., and Wu, Chung P. Tue .
"Formation of thin-film resistors on silicon substrates". United States. https://www.osti.gov/servlets/purl/875220.
@article{osti_875220,
title = {Formation of thin-film resistors on silicon substrates},
author = {Schnable, George L. and Wu, Chung P.},
abstractNote = {The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Nov 01 00:00:00 EST 1988},
month = {Tue Nov 01 00:00:00 EST 1988}
}
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