Formation of thin-film resistors on silicon substrates

Title: Formation of thin-film resistors on silicon substrates

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Abstract

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Inventors:

Schnable, George L ^[1]; Wu, Chung P ^[2]

Montgomery County, PA
Hamilton Township, Mercer County, NJ

Issue Date:: 1988-11-01

OSTI Identifier:: 875220

Patent Number(s):: H546

Application Number:: 02/716,089

Assignee:: United States of America as represented by Secretary of Air (Washington, DC)

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: formation; thin-film; resistors; silicon; substrates; implantation; metallic; conductive; layer; surface; phosphosilicate; glass; borophosphosilicate; deposited; substrate; materials; comprise; consisting; tantalum; ruthenium; rhodium; platinum; chromium; silicide; resistor; formed; annealed; prior; deposition; metal; aluminum; silicon substrates; silicon substrate; conductive layer; silicate glass; thin-film resistors; film resistor; materials comprise; layer material; film resistors; layer materials; /438/

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                    Schnable, George L, and Wu, Chung P. Formation of thin-film resistors on silicon substrates.  United States: N. p., 1988. 
        Web.

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                    Schnable, George L, & Wu, Chung P. Formation of thin-film resistors on silicon substrates.  United States.

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                    Schnable, George L, and Wu, Chung P. Tue .  
        "Formation of thin-film resistors on silicon substrates".  United States.  https://www.osti.gov/servlets/purl/875220.

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@article{osti_875220,

  title        = {Formation of thin-film resistors on silicon substrates},

  author       = {Schnable, George L and Wu, Chung P},

  abstractNote = {The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1988},

  month        = {11}

}

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