skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Formation of thin-film resistors on silicon substrates

Abstract

The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

Inventors:
 [1];  [2]
  1. (Montgomery County, PA)
  2. (Hamilton Township, Mercer County, NJ)
Issue Date:
OSTI Identifier:
875220
Patent Number(s):
H546
Application Number:
02/716,089
Assignee:
United States of America as represented by Secretary of Air (Washington, DC) OSTI
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
formation; thin-film; resistors; silicon; substrates; implantation; metallic; conductive; layer; surface; phosphosilicate; glass; borophosphosilicate; deposited; substrate; materials; comprise; consisting; tantalum; ruthenium; rhodium; platinum; chromium; silicide; resistor; formed; annealed; prior; deposition; metal; aluminum; silicon substrates; silicon substrate; conductive layer; silicate glass; thin-film resistors; film resistor; materials comprise; layer material; film resistors; layer materials; /438/

Citation Formats

Schnable, George L., and Wu, Chung P. Formation of thin-film resistors on silicon substrates. United States: N. p., 1988. Web.
Schnable, George L., & Wu, Chung P. Formation of thin-film resistors on silicon substrates. United States.
Schnable, George L., and Wu, Chung P. Tue . "Formation of thin-film resistors on silicon substrates". United States. https://www.osti.gov/servlets/purl/875220.
@article{osti_875220,
title = {Formation of thin-film resistors on silicon substrates},
author = {Schnable, George L. and Wu, Chung P.},
abstractNote = {The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1988},
month = {11}
}

Patent:

Save / Share: