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Title: Nanotube junctions

Abstract

The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.

Inventors:
 [1];  [2];  [2];  [3]
  1. (Darien, IL)
  2. (Berkeley, CA)
  3. (Kensington, CA)
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
875128
Patent Number(s):
6538262
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
nanotube; junctions; nanoscale; metal-semiconductor; semiconductor-semiconductor; metal-metal; junction; designed; introducing; topological; chemical; defects; atomic; structure; nanotubes; comprising; adjacent; sections; differing; electrical; properties; described; constructed; combinations; carbon; boron; nitrogen; elements; indices; continuous; tube; useful; fashion; example; inventive; electrically; conducting; semiconducting; semiconductor-metal; schottky; barrier; alternatively; exhibit; semiconductor; containing; heterojunctions; barriers; microcircuitry; electrically conducting; electrical properties; /257/428/

Citation Formats

Crespi, Vincent Henry, Cohen, Marvin Lou, Louie, Steven Gwon Sheng, and Zettl, Alexander Karlwalter. Nanotube junctions. United States: N. p., 2003. Web.
Crespi, Vincent Henry, Cohen, Marvin Lou, Louie, Steven Gwon Sheng, & Zettl, Alexander Karlwalter. Nanotube junctions. United States.
Crespi, Vincent Henry, Cohen, Marvin Lou, Louie, Steven Gwon Sheng, and Zettl, Alexander Karlwalter. Wed . "Nanotube junctions". United States. https://www.osti.gov/servlets/purl/875128.
@article{osti_875128,
title = {Nanotube junctions},
author = {Crespi, Vincent Henry and Cohen, Marvin Lou and Louie, Steven Gwon Sheng and Zettl, Alexander Karlwalter},
abstractNote = {The present invention comprises a new nanoscale metal-semiconductor, semiconductor-semiconductor, or metal-metal junction, designed by introducing topological or chemical defects in the atomic structure of the nanotube. Nanotubes comprising adjacent sections having differing electrical properties are described. These nanotubes can be constructed from combinations of carbon, boron, nitrogen and other elements. The nanotube can be designed having different indices on either side of a junction point in a continuous tube so that the electrical properties on either side of the junction vary in a useful fashion. For example, the inventive nanotube may be electrically conducting on one side of a junction and semiconducting on the other side. An example of a semiconductor-metal junction is a Schottky barrier. Alternatively, the nanotube may exhibit different semiconductor properties on either side of the junction. Nanotubes containing heterojunctions, Schottky barriers, and metal-metal junctions are useful for microcircuitry.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

Patent:

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