Chemical surface deposition of ultra-thin semiconductors

Title: Chemical surface deposition of ultra-thin semiconductors

Full Record
Other Related Research

Abstract

A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

Inventors:

McCandless, Brian E. ^[1]; Shafarman, William N. ^[2]

(243 W. Main St., Elkton, MD 21921)
(1905 N. Van Buren St., Wilmington, DE 19802)

Issue Date:: 2003-03-25

Research Org.:: University of Delaware

OSTI Identifier:: 875127

Patent Number(s):: 6537845

Application Number:: 09/942,536

Assignee:: McCandless; Brian E. (243 W. Main St., Elkton, MD 21921); Shafarman; William N. (1905 N. Van Buren St., Wilmington, DE 19802) OSTI

DOE Contract Number:: ZAK-8-17619-33

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: chemical; surface; deposition; ultra-thin; semiconductors; process; forming; semiconducting; film; iib-via; compounds; substrate; eliminates; particulates; formed; homogeneous; reactions; bath; dramatically; increases; utilization; iib; species; results; formation; dense; adherent; solar; cells; involves; applying; pre-mixed; liquid; coating; composition; containing; via; ionic; preheated; heat; causes; heterogeneous; reaction; solid; product; solar cell; reaction product; substrate surface; deposition process; surface deposit; conducting film; /438/136/

Citation Formats


                    McCandless, Brian E., and Shafarman, William N. Chemical surface deposition of ultra-thin semiconductors.  United States: N. p., 2003. 
        Web.

Copy to clipboard


                    McCandless, Brian E., & Shafarman, William N. Chemical surface deposition of ultra-thin semiconductors.  United States.

Copy to clipboard


                    McCandless, Brian E., and Shafarman, William N. Tue .  
        "Chemical surface deposition of ultra-thin semiconductors".  United States.  https://www.osti.gov/servlets/purl/875127.

Copy to clipboard


                    
@article{osti_875127,

  title        = {Chemical surface deposition of ultra-thin semiconductors},

  author       = {McCandless, Brian E. and Shafarman, William N.},

  abstractNote = {A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2003},

  month        = {3}

}

Copy to clipboard

Patent:

View Patent

Save / Share:

Export Metadata

Save to My Library

Similar records in DOE Patents and OSTI.GOV collections:

Method of making dense, conformal, ultra-thin cap layers for nanoporous low-k ILD by plasma assisted atomic layer deposition

Patent Jiang, Ying-Bing [Albuquerque, NM]; Cecchi, Joseph L [Albuquerque, NM]; Brinker, C Jeffrey [Albuquerque, NM]

Barrier layers and methods for forming barrier layers on a porous layer are provided. The methods can include chemically adsorbing a plurality of first molecules on a surface of the porous layer in a chamber and forming a first layer of the first molecules on the surface of the porous layer. A plasma can then be used to react a plurality of second molecules with the first layer of first molecules to form a first layer of a barrier layer. The barrier layers can seal the pores of the porous material, function as a diffusion barrier, be conformal, and/or havemore »« less
Full Text Available
Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

Patent Zhang, Ji-Guang (Golden, CO); Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO); ...

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursormore »« less
Full Text Available
Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

Patent Miller, Joel S. (Salt Lake City, UT); Pokhodnya, Kostyantyn I. (Salt Lake City, UT)

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitablemore »« less
Full Text Available
Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

Patent Wang, Qi; Iwaniczko, Eugene

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.
Full Text Available
Chemical enhancement of surface deposition

Patent Patch, Keith D. (Lexington, MA); Morgan, Dean T. (Sudbury, MA)

A method and apparatus for increasing the deposition of ions onto a surface, such as the adsorption of uranium ions on the detecting surface of a radionuclide detector. The method includes the step of exposing the surface to a complexing agent, such as a phosphate ion solution, which has an affinity for the dissolved species to be deposited on the surface. This provides, for example, enhanced sensitivity of the radionuclide detector.
Full Text Available

Similar Records