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Title: Chemical surface deposition of ultra-thin semiconductors

Abstract

A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.

Inventors:
 [1];  [2]
  1. (243 W. Main St., Elkton, MD 21921)
  2. (1905 N. Van Buren St., Wilmington, DE 19802)
Issue Date:
Research Org.:
University of Delaware
OSTI Identifier:
875127
Patent Number(s):
6537845
Application Number:
09/942,536
Assignee:
McCandless; Brian E. (243 W. Main St., Elkton, MD 21921); Shafarman; William N. (1905 N. Van Buren St., Wilmington, DE 19802) OSTI
DOE Contract Number:  
ZAK-8-17619-33
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
chemical; surface; deposition; ultra-thin; semiconductors; process; forming; semiconducting; film; iib-via; compounds; substrate; eliminates; particulates; formed; homogeneous; reactions; bath; dramatically; increases; utilization; iib; species; results; formation; dense; adherent; solar; cells; involves; applying; pre-mixed; liquid; coating; composition; containing; via; ionic; preheated; heat; causes; heterogeneous; reaction; solid; product; solar cell; reaction product; substrate surface; deposition process; surface deposit; conducting film; /438/136/

Citation Formats

McCandless, Brian E., and Shafarman, William N. Chemical surface deposition of ultra-thin semiconductors. United States: N. p., 2003. Web.
McCandless, Brian E., & Shafarman, William N. Chemical surface deposition of ultra-thin semiconductors. United States.
McCandless, Brian E., and Shafarman, William N. Tue . "Chemical surface deposition of ultra-thin semiconductors". United States. https://www.osti.gov/servlets/purl/875127.
@article{osti_875127,
title = {Chemical surface deposition of ultra-thin semiconductors},
author = {McCandless, Brian E. and Shafarman, William N.},
abstractNote = {A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {3}
}

Patent:

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