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Title: Method of growing GaN films with a low density of structural defects using an interlayer

Abstract

A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

Inventors:
 [1]
  1. (Richmond, CA)
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
875113
Patent Number(s):
6534332
Assignee:
The Regents of the University of California (Oakland, CA) LBNL
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; growing; films; density; structural; defects; interlayer; dramatic; reduction; dislocation; obtained; insertion; single; grown; intermediate; temperature; it-il; growth; initial; process; characterization; results; aimed; understanding; mechanisms; percentage; threading; dislocations; epilayer; found; bend; near; propagate; top; layer; grows; lateral; mode; studies; similar; described; epitaxial; overgrowth; notable; difference; absence; coalescence; boundaries; top layer; intermediate temperature; /438/148/

Citation Formats

Bourret-Courchesne, Edith D. Method of growing GaN films with a low density of structural defects using an interlayer. United States: N. p., 2003. Web.
Bourret-Courchesne, Edith D. Method of growing GaN films with a low density of structural defects using an interlayer. United States.
Bourret-Courchesne, Edith D. Wed . "Method of growing GaN films with a low density of structural defects using an interlayer". United States. https://www.osti.gov/servlets/purl/875113.
@article{osti_875113,
title = {Method of growing GaN films with a low density of structural defects using an interlayer},
author = {Bourret-Courchesne, Edith D.},
abstractNote = {A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

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