Method of growing GaN films with a low density of structural defects using an interlayer
Abstract
A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.
- Inventors:
-
- Richmond, CA
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 875113
- Patent Number(s):
- 6534332
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; growing; films; density; structural; defects; interlayer; dramatic; reduction; dislocation; obtained; insertion; single; grown; intermediate; temperature; it-il; growth; initial; process; characterization; results; aimed; understanding; mechanisms; percentage; threading; dislocations; epilayer; found; bend; near; propagate; top; layer; grows; lateral; mode; studies; similar; described; epitaxial; overgrowth; notable; difference; absence; coalescence; boundaries; top layer; intermediate temperature; /438/148/
Citation Formats
Bourret-Courchesne, Edith D. Method of growing GaN films with a low density of structural defects using an interlayer. United States: N. p., 2003.
Web.
Bourret-Courchesne, Edith D. Method of growing GaN films with a low density of structural defects using an interlayer. United States.
Bourret-Courchesne, Edith D. Wed .
"Method of growing GaN films with a low density of structural defects using an interlayer". United States. https://www.osti.gov/servlets/purl/875113.
@article{osti_875113,
title = {Method of growing GaN films with a low density of structural defects using an interlayer},
author = {Bourret-Courchesne, Edith D},
abstractNote = {A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}
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