Monolithic integration of a MOSFET with a MEMS device

Title: Monolithic integration of a MOSFET with a MEMS device

Abstract

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Inventors:

Bennett, Reid ^[1]; Draper, Bruce ^[2]

Albuquerque, NM
Albuquerque, MN

Issue Date:: 2003-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 875099

Patent Number(s):: 6531331

Assignee:: Sandia Corporation (Albuquerque, NM)

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: monolithic; integration; mosfet; mems; device; integrated; microelectromechanical; interconnected; common; substrate; method; integrating; fabricating; monolithically; conveniently; gate; insulator; electrode; electrical; contacts; source; drain; formed; simultaneously; structure; eliminating; process; steps; materials; structural; layers; doped; polysilicon; dopant; diffusion; form; regions; thermal; step; forming; anneal; relieve; stress; electrical contact; mems device; common substrate; /438/

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                    Bennett, Reid, and Draper, Bruce. Monolithic integration of a MOSFET with a MEMS device.  United States: N. p., 2003. 
        Web.

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                    Bennett, Reid, & Draper, Bruce. Monolithic integration of a MOSFET with a MEMS device.  United States.

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                    Bennett, Reid, and Draper, Bruce. Wed .  
        "Monolithic integration of a MOSFET with a MEMS device".  United States.  https://www.osti.gov/servlets/purl/875099.

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@article{osti_875099,

  title        = {Monolithic integration of a MOSFET with a MEMS device},

  author       = {Bennett, Reid and Draper, Bruce},

  abstractNote = {An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {2003},

  month        = {1}

}

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Works referenced in this record:

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Similar Records

Title: Monolithic integration of a MOSFET with a MEMS device

Abstract

Citation Formats

A fabrication process for integrating polysilicon microstructures with post-processed CMOS circuits journal, June 2000

Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments conference, January 1997

A monolithic fully-integrated vacuum-sealed CMOS pressure sensor journal, January 2002

CMOS-based microsensors and packaging journal, August 2001

Laminated, sacrificial-poly MEMS technology in standard CMOS journal, August 2000

An integration process of micro electro mechanical polysilicon with CMOS analog/digital circuits journal, December 1999

Integration of sputtered silicon microstructures with pre-fabricated CMOS circuitry journal, July 2001

A fabrication process for integrating polysilicon microstructures with post-processed CMOS circuits
journal, June 2000

Embedded interconnect and electrical isolation for high-aspect-ratio, SOI inertial instruments
conference, January 1997

A monolithic fully-integrated vacuum-sealed CMOS pressure sensor
journal, January 2002

CMOS-based microsensors and packaging
journal, August 2001

Laminated, sacrificial-poly MEMS technology in standard CMOS
journal, August 2000

An integration process of micro electro mechanical polysilicon with CMOS analog/digital circuits
journal, December 1999

Integration of sputtered silicon microstructures with pre-fabricated CMOS circuitry
journal, July 2001