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Title: Monolithic integration of a MOSFET with a MEMS device

Abstract

An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.

Inventors:
 [1];  [2]
  1. (Albuquerque, NM)
  2. (Albuquerque, MN)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
875099
Patent Number(s):
6531331
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
monolithic; integration; mosfet; mems; device; integrated; microelectromechanical; interconnected; common; substrate; method; integrating; fabricating; monolithically; conveniently; gate; insulator; electrode; electrical; contacts; source; drain; formed; simultaneously; structure; eliminating; process; steps; materials; structural; layers; doped; polysilicon; dopant; diffusion; form; regions; thermal; step; forming; anneal; relieve; stress; electrical contact; mems device; common substrate; /438/

Citation Formats

Bennett, Reid, and Draper, Bruce. Monolithic integration of a MOSFET with a MEMS device. United States: N. p., 2003. Web.
Bennett, Reid, & Draper, Bruce. Monolithic integration of a MOSFET with a MEMS device. United States.
Bennett, Reid, and Draper, Bruce. Wed . "Monolithic integration of a MOSFET with a MEMS device". United States. https://www.osti.gov/servlets/purl/875099.
@article{osti_875099,
title = {Monolithic integration of a MOSFET with a MEMS device},
author = {Bennett, Reid and Draper, Bruce},
abstractNote = {An integrated microelectromechanical system comprises at least one MOSFET interconnected to at least one MEMS device on a common substrate. A method for integrating the MOSFET with the MEMS device comprises fabricating the MOSFET and MEMS device monolithically on the common substrate. Conveniently, the gate insulator, gate electrode, and electrical contacts for the gate, source, and drain can be formed simultaneously with the MEMS device structure, thereby eliminating many process steps and materials. In particular, the gate electrode and electrical contacts of the MOSFET and the structural layers of the MEMS device can be doped polysilicon. Dopant diffusion from the electrical contacts is used to form the source and drain regions of the MOSFET. The thermal diffusion step for forming the source and drain of the MOSFET can comprise one or more of the thermal anneal steps to relieve stress in the structural layers of the MEMS device.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

Patent:

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