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Title: Oxidized film structure and method of making epitaxial metal oxide structure

Abstract

A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.

Inventors:
 [1];  [1]
  1. Richland, WA
Issue Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
875074
Patent Number(s):
6,524,651
Assignee:
Battelle Memorial Institute (Richland, WA)
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
oxidized; film; structure; method; epitaxial; metal; oxide; stable; improved; including; interfacial; template; growing; crystalline; disclosed; steps; providing; substrate; clean; surface; depositing; temperature; vacuum; form; metal-substrate; compound; layer; thickness; monolayer; exposing; essentially; oxygen; partial; pressure; step; annealing; stabilize; subsequently; epitaxially; grown; metal oxide; partial pressure; /427/117/

Citation Formats

Gan, Shupan, and Liang, Yong. Oxidized film structure and method of making epitaxial metal oxide structure. United States: N. p., 2003. Web.
Gan, Shupan, & Liang, Yong. Oxidized film structure and method of making epitaxial metal oxide structure. United States.
Gan, Shupan, and Liang, Yong. Tue . "Oxidized film structure and method of making epitaxial metal oxide structure". United States. https://www.osti.gov/servlets/purl/875074.
@article{osti_875074,
title = {Oxidized film structure and method of making epitaxial metal oxide structure},
author = {Gan, Shupan and Liang, Yong},
abstractNote = {A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {2}
}

Patent:

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Works referenced in this record:

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