Oxidized film structure and method of making epitaxial metal oxide structure
Abstract
A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.
- Inventors:
-
- Richland, WA
- Issue Date:
- Research Org.:
- Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 875074
- Patent Number(s):
- 6524651
- Assignee:
- Battelle Memorial Institute (Richland, WA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC06-76RL01830
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- oxidized; film; structure; method; epitaxial; metal; oxide; stable; improved; including; interfacial; template; growing; crystalline; disclosed; steps; providing; substrate; clean; surface; depositing; temperature; vacuum; form; metal-substrate; compound; layer; thickness; monolayer; exposing; essentially; oxygen; partial; pressure; step; annealing; stabilize; subsequently; epitaxially; grown; metal oxide; partial pressure; /427/117/
Citation Formats
Gan, Shupan, and Liang, Yong. Oxidized film structure and method of making epitaxial metal oxide structure. United States: N. p., 2003.
Web.
Gan, Shupan, & Liang, Yong. Oxidized film structure and method of making epitaxial metal oxide structure. United States.
Gan, Shupan, and Liang, Yong. Tue .
"Oxidized film structure and method of making epitaxial metal oxide structure". United States. https://www.osti.gov/servlets/purl/875074.
@article{osti_875074,
title = {Oxidized film structure and method of making epitaxial metal oxide structure},
author = {Gan, Shupan and Liang, Yong},
abstractNote = {A stable oxidized structure and an improved method of making such a structure, including an improved method of making an interfacial template for growing a crystalline metal oxide structure, are disclosed. The improved method comprises the steps of providing a substrate with a clean surface and depositing a metal on the surface at a high temperature under a vacuum to form a metal-substrate compound layer on the surface with a thickness of less than one monolayer. The compound layer is then oxidized by exposing the compound layer to essentially oxygen at a low partial pressure and low temperature. The method may further comprise the step of annealing the surface while under a vacuum to further stabilize the oxidized film structure. A crystalline metal oxide structure may be subsequently epitaxially grown by using the oxidized film structure as an interfacial template and depositing on the interfacial template at least one layer of a crystalline metal oxide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {2}
}
Works referenced in this record:
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
journal, August 1991
- McKee, R. A.; Walker, F. J.; Conner, J. R.
- Applied Physics Letters, Vol. 59, Issue 7
BaSi 2 and thin film alkaline earth silicides on silicon
journal, November 1993
- McKee, R. A.; Walker, F. J.; Conner, J. R.
- Applied Physics Letters, Vol. 63, Issue 20
Epitaxial oxide thin films on Si(001)
journal, January 2000
- Yu, Z.; Ramdani, J.; Curless, J. A.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 18, Issue 4
Crystalline Oxides on Silicon: The First Five Monolayers
journal, October 1998
- McKee, R. A.; Walker, F. J.; Chisholm, M. F.
- Physical Review Letters, Vol. 81, Issue 14
Field effect transistors with SrTiO3 gate dielectric on Si
journal, March 2000
- Eisenbeiser, K.; Finder, J. M.; Yu, Z.
- Applied Physics Letters, Vol. 76, Issue 10