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Title: Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

Abstract

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.

Inventors:
 [1];  [2]
  1. (Los Angeles, CA)
  2. (Sherman Oaks, CA)
Issue Date:
Research Org.:
Photon Imaging, Inc., Northridge, CA
OSTI Identifier:
875061
Patent Number(s):
6521894
Assignee:
Photon Imaging, Inc. (Northridge, CA) OAK
DOE Contract Number:  
FG03-97ER82451
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
gamma-ray; detector; employing; scintillators; coupled; semiconductor; drift; photodetectors; radiation; detectors; embodiment; implemented; combined; components; specifically; constructed; terms; geometry; dimensions; arrangement; scintillator; decay; time; photodetector; pairs; matched; achieve; signal-to-noise; ratio; electronics; amplification; electrical; signals; produced; silicon; shaping; optimized; spread; signal; substantially; maximize; electronic; noise; electrical signal; radiation detector; noise ratio; detector employing; ray detector; /250/

Citation Formats

Iwanczyk, Jan S., and Patt, Bradley E. Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors. United States: N. p., 2003. Web.
Iwanczyk, Jan S., & Patt, Bradley E. Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors. United States.
Iwanczyk, Jan S., and Patt, Bradley E. Wed . "Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors". United States. https://www.osti.gov/servlets/purl/875061.
@article{osti_875061,
title = {Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors},
author = {Iwanczyk, Jan S. and Patt, Bradley E.},
abstractNote = {Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector to substantially maximize the ratio of the signal to the electronic noise.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

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