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Title: Chemical method for producing smooth surfaces on silicon wafers

Abstract

An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).

Inventors:
 [1]
  1. (Antioch, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
875025
Patent Number(s):
6514875
Assignee:
The Regents of the University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
chemical; method; producing; smooth; surfaces; silicon; wafers; improved; optically; wet; etching; involves; pre-treatment; rinse; post-etching; organic; solvent; provides; well-wetted; surface; ensures; uniform; mass; transfer; results; treatment; acetic; acid; solution; stops; instantly; preventing; uneven; leads; roughness; etch; depth; 200; mum; finished; 15-50; ang; rms; organic solvent; acid solution; smooth surface; wet chemical; producing optical; chemical method; /438/134/

Citation Formats

Yu, Conrad. Chemical method for producing smooth surfaces on silicon wafers. United States: N. p., 2003. Web.
Yu, Conrad. Chemical method for producing smooth surfaces on silicon wafers. United States.
Yu, Conrad. Wed . "Chemical method for producing smooth surfaces on silicon wafers". United States. https://www.osti.gov/servlets/purl/875025.
@article{osti_875025,
title = {Chemical method for producing smooth surfaces on silicon wafers},
author = {Yu, Conrad},
abstractNote = {An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

Patent:

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