Chemical method for producing smooth surfaces on silicon wafers
Abstract
An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).
- Inventors:
-
- Antioch, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 875025
- Patent Number(s):
- 6514875
- Assignee:
- The Regents of the University of California (Oakland, CA)
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- chemical; method; producing; smooth; surfaces; silicon; wafers; improved; optically; wet; etching; involves; pre-treatment; rinse; post-etching; organic; solvent; provides; well-wetted; surface; ensures; uniform; mass; transfer; results; treatment; acetic; acid; solution; stops; instantly; preventing; uneven; leads; roughness; etch; depth; 200; mum; finished; 15-50; ang; rms; organic solvent; acid solution; smooth surface; wet chemical; producing optical; chemical method; /438/134/
Citation Formats
Yu, Conrad. Chemical method for producing smooth surfaces on silicon wafers. United States: N. p., 2003.
Web.
Yu, Conrad. Chemical method for producing smooth surfaces on silicon wafers. United States.
Yu, Conrad. Wed .
"Chemical method for producing smooth surfaces on silicon wafers". United States. https://www.osti.gov/servlets/purl/875025.
@article{osti_875025,
title = {Chemical method for producing smooth surfaces on silicon wafers},
author = {Yu, Conrad},
abstractNote = {An improved method for producing optically smooth surfaces in silicon wafers during wet chemical etching involves a pre-treatment rinse of the wafers before etching and a post-etching rinse. The pre-treatment with an organic solvent provides a well-wetted surface that ensures uniform mass transfer during etching, which results in optically smooth surfaces. The post-etching treatment with an acetic acid solution stops the etching instantly, preventing any uneven etching that leads to surface roughness. This method can be used to etch silicon surfaces to a depth of 200 .mu.m or more, while the finished surfaces have a surface roughness of only 15-50 .ANG. (RMS).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}
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Works referenced in this record:
Etching roughness for (100) silicon surfaces in aqueous KOH
journal, September 1991
- Palik, E. D.; Glembocki, O. J.; Heard, I.
- Journal of Applied Physics, Vol. 70, Issue 6