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Title: Light sources based on semiconductor current filaments

Abstract

The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.

Inventors:
 [1];  [1];  [2];  [1];  [1];  [3];  [1];  [1];  [4];  [1]
  1. (Albuquerque, NM)
  2. (Sandia Park, NM)
  3. (Edgewood, NM)
  4. (Cedar Crest, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
874983
Patent Number(s):
6504859
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
light; sources; based; semiconductor; current; filaments; provides; type; source; produce; peak; power; output; injection; e-beam; optically; pumped; capable; producing; quality; coherent; incoherent; optical; emission; unlike; conventional; lasers; p-n; junctions; formed; electron-hole; plasma; inside; filament; hundred; microns; diameter; centimeters; initiated; electrically; insulating; region; produced; photoconductive; switches; provided; potentially; volume; energy; pulse; available; single; laser; emit; radiation; wavelength; near; bandgap; gaas; 875; nm; infra; immediate; potential; applications; compact; cost; light source; power output; semiconductor switch; optically pump; /372/

Citation Formats

Zutavern, Fred J., Loubriel, Guillermo M., Buttram, Malcolm T., Mar, Alan, Helgeson, Wesley D., O'Malley, Martin W., Hjalmarson, Harold P., Baca, Albert G., Chow, Weng W., and Vawter, G. Allen. Light sources based on semiconductor current filaments. United States: N. p., 2003. Web.
Zutavern, Fred J., Loubriel, Guillermo M., Buttram, Malcolm T., Mar, Alan, Helgeson, Wesley D., O'Malley, Martin W., Hjalmarson, Harold P., Baca, Albert G., Chow, Weng W., & Vawter, G. Allen. Light sources based on semiconductor current filaments. United States.
Zutavern, Fred J., Loubriel, Guillermo M., Buttram, Malcolm T., Mar, Alan, Helgeson, Wesley D., O'Malley, Martin W., Hjalmarson, Harold P., Baca, Albert G., Chow, Weng W., and Vawter, G. Allen. Wed . "Light sources based on semiconductor current filaments". United States. https://www.osti.gov/servlets/purl/874983.
@article{osti_874983,
title = {Light sources based on semiconductor current filaments},
author = {Zutavern, Fred J. and Loubriel, Guillermo M. and Buttram, Malcolm T. and Mar, Alan and Helgeson, Wesley D. and O'Malley, Martin W. and Hjalmarson, Harold P. and Baca, Albert G. and Chow, Weng W. and Vawter, G. Allen},
abstractNote = {The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2003},
month = {1}
}

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