Light sources based on semiconductor current filaments
Abstract
The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.
- Inventors:
-
- Albuquerque, NM
- Sandia Park, NM
- Edgewood, NM
- Cedar Crest, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874983
- Patent Number(s):
- 6504859
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- light; sources; based; semiconductor; current; filaments; provides; type; source; produce; peak; power; output; injection; e-beam; optically; pumped; capable; producing; quality; coherent; incoherent; optical; emission; unlike; conventional; lasers; p-n; junctions; formed; electron-hole; plasma; inside; filament; hundred; microns; diameter; centimeters; initiated; electrically; insulating; region; produced; photoconductive; switches; provided; potentially; volume; energy; pulse; available; single; laser; emit; radiation; wavelength; near; bandgap; gaas; 875; nm; infra; immediate; potential; applications; compact; cost; light source; power output; semiconductor switch; optically pump; /372/
Citation Formats
Zutavern, Fred J, Loubriel, Guillermo M, Buttram, Malcolm T, Mar, Alan, Helgeson, Wesley D, O'Malley, Martin W, Hjalmarson, Harold P, Baca, Albert G, Chow, Weng W, and Vawter, G Allen. Light sources based on semiconductor current filaments. United States: N. p., 2003.
Web.
Zutavern, Fred J, Loubriel, Guillermo M, Buttram, Malcolm T, Mar, Alan, Helgeson, Wesley D, O'Malley, Martin W, Hjalmarson, Harold P, Baca, Albert G, Chow, Weng W, & Vawter, G Allen. Light sources based on semiconductor current filaments. United States.
Zutavern, Fred J, Loubriel, Guillermo M, Buttram, Malcolm T, Mar, Alan, Helgeson, Wesley D, O'Malley, Martin W, Hjalmarson, Harold P, Baca, Albert G, Chow, Weng W, and Vawter, G Allen. Wed .
"Light sources based on semiconductor current filaments". United States. https://www.osti.gov/servlets/purl/874983.
@article{osti_874983,
title = {Light sources based on semiconductor current filaments},
author = {Zutavern, Fred J and Loubriel, Guillermo M and Buttram, Malcolm T and Mar, Alan and Helgeson, Wesley D and O'Malley, Martin W and Hjalmarson, Harold P and Baca, Albert G and Chow, Weng W and Vawter, G Allen},
abstractNote = {The present invention provides a new type of semiconductor light source that can produce a high peak power output and is not injection, e-beam, or optically pumped. The present invention is capable of producing high quality coherent or incoherent optical emission. The present invention is based on current filaments, unlike conventional semiconductor lasers that are based on p-n junctions. The present invention provides a light source formed by an electron-hole plasma inside a current filament. The electron-hole plasma can be several hundred microns in diameter and several centimeters long. A current filament can be initiated optically or with an e-beam, but can be pumped electrically across a large insulating region. A current filament can be produced in high gain photoconductive semiconductor switches. The light source provided by the present invention has a potentially large volume and therefore a potentially large energy per pulse or peak power available from a single (coherent) semiconductor laser. Like other semiconductor lasers, these light sources will emit radiation at the wavelength near the bandgap energy (for GaAs 875 nm or near infra red). Immediate potential applications of the present invention include high energy, short pulse, compact, low cost lasers and other incoherent light sources.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 2003},
month = {Wed Jan 01 00:00:00 EST 2003}
}
Works referenced in this record:
Electron-beam-pumped semiconductor lasers
journal, December 1994
- Bogdankevich, O. V.
- Quantum Electronics, Vol. 24, Issue 12