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Title: Gold-based electrical interconnections for microelectronic devices

Abstract

A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.

Inventors:
 [1];  [1];  [2];  [3]
  1. Albuquerque, NM
  2. Corrales, NM
  3. Tijeras, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874971
Patent Number(s):
6500760
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
gold-based; electrical; interconnections; microelectronic; devices; method; interconnection; device; package; comprising; ball; wedge; compression; bonding; conductor; directly; silicon; surface; polysilicon; pad; mems; imems; layers; aluminum; titanium; disposed; in-between; optional; heating; bond; 363; allows; formation; liquid; gold-silicon; eutectic; phase; containing; approximately; weight; significantly; improves; strength; reforming; enhancing; initial; process; improving; au-ge; bonds; forming; au-12ge; mems device; electrical interconnection; electronic device; /438/

Citation Formats

Peterson, Kenneth A, Garrett, Stephen E, Reber, Cathleen A, and Watson, Robert D. Gold-based electrical interconnections for microelectronic devices. United States: N. p., 2002. Web.
Peterson, Kenneth A, Garrett, Stephen E, Reber, Cathleen A, & Watson, Robert D. Gold-based electrical interconnections for microelectronic devices. United States.
Peterson, Kenneth A, Garrett, Stephen E, Reber, Cathleen A, and Watson, Robert D. Tue . "Gold-based electrical interconnections for microelectronic devices". United States. https://www.osti.gov/servlets/purl/874971.
@article{osti_874971,
title = {Gold-based electrical interconnections for microelectronic devices},
author = {Peterson, Kenneth A and Garrett, Stephen E and Reber, Cathleen A and Watson, Robert D},
abstractNote = {A method of making an electrical interconnection from a microelectronic device to a package, comprising ball or wedge compression bonding a gold-based conductor directly to a silicon surface, such as a polysilicon bonding pad in a MEMS or IMEMS device, without using layers of aluminum or titanium disposed in-between the conductor and the silicon surface. After compression bonding, optional heating of the bond above 363 C. allows formation of a liquid gold-silicon eutectic phase containing approximately 3% (by weight) silicon, which significantly improves the bond strength by reforming and enhancing the initial compression bond. The same process can be used for improving the bond strength of Au--Ge bonds by forming a liquid Au-12Ge eutectic phase.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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