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Title: Method for enhancing the solubility of boron and indium in silicon

Abstract

A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.

Inventors:
 [1];  [2];  [3];  [4];  [5];  [2];  [6];  [7];  [8];  [5]
  1. (Oakland, CA)
  2. (Pleasanton, CA)
  3. (Danville, CA)
  4. (Hillsborough, OR)
  5. (Livermore, CA)
  6. (Evanston, IL)
  7. (St. Paul, MN)
  8. (Santa Clara, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874958
Patent Number(s):
6498078
Assignee:
The Regents of the University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; enhancing; solubility; boron; indium; silicon; equilibrium; involves; first-principles; quantum; mechanical; calculations; determine; temperature; dependence; p-type; dopants; namely; strain; conditions; thermodynamic; size-mismatched; impurities; raised; significantly; substrate; strained; appropriately; example; compressive; raises; 100; 1100degree; tensile; corresponds; enhancement; 200; silicon substrate; /438/

Citation Formats

Sadigh, Babak, Lenosky, Thomas J., Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. Method for enhancing the solubility of boron and indium in silicon. United States: N. p., 2002. Web.
Sadigh, Babak, Lenosky, Thomas J., Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, & Quong, Andrew. Method for enhancing the solubility of boron and indium in silicon. United States.
Sadigh, Babak, Lenosky, Thomas J., Diaz de la Rubia, Tomas, Giles, Martin, Caturla, Maria-Jose, Ozolins, Vidvuds, Asta, Mark, Theiss, Silva, Foad, Majeed, and Quong, Andrew. Tue . "Method for enhancing the solubility of boron and indium in silicon". United States. https://www.osti.gov/servlets/purl/874958.
@article{osti_874958,
title = {Method for enhancing the solubility of boron and indium in silicon},
author = {Sadigh, Babak and Lenosky, Thomas J. and Diaz de la Rubia, Tomas and Giles, Martin and Caturla, Maria-Jose and Ozolins, Vidvuds and Asta, Mark and Theiss, Silva and Foad, Majeed and Quong, Andrew},
abstractNote = {A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100.degree. C.; and for indium, a 1% tensile strain at 1100.degree. C., corresponds to an enhancement of the solubility by 200%.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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