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Title: Process for fabricating a charge coupled device

Abstract

A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface of the semiconductor substrate. The 3D-CCD is capable of developing a strong E-field throughout the depth of the semiconductor by using deep (buried) parallel (bulk) electrodes in the substrate material. Using backside illumination, the 3D-CCD architecture enables a single device to image photon energies from the visible, to the ultra-violet and soft x-ray, and out to higher energy x-rays of 30 keV and beyond. The buried or bulk electrodes are electrically connected to the surface electrodes, and an E-field parallel to the surface is established with the pixel in which the bulk electrodes are located. This E-field attracts charge to the bulk electrodes independent of depth and confines it within the pixel in which it is generated. Charge diffusion is greatly reduced because the E-field is strong due to the proximity of the bulk electrodes.

Inventors:
 [1];  [2]
  1. (Tracy, CA)
  2. (Livermore, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874916
Patent Number(s):
6489179
Assignee:
The Regents of the University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; fabricating; charge; coupled; device; monolithic; dimensional; charged; 3d-ccd; utilizes; entire; bulk; semiconductor; generation; storage; transfer; provides; vast; improvement; current; ccd; architectures; surface; substrate; capable; developing; strong; e-field; throughout; depth; deep; buried; parallel; electrodes; material; backside; illumination; architecture; enables; single; image; photon; energies; visible; ultra-violet; soft; x-ray; energy; x-rays; 30; kev; electrically; connected; established; pixel; located; attracts; independent; confines; generated; diffusion; greatly; reduced; due; proximity; electrically connected; charge coupled; /438/257/

Citation Formats

Conder, Alan D., and Young, Bruce K. F. Process for fabricating a charge coupled device. United States: N. p., 2002. Web.
Conder, Alan D., & Young, Bruce K. F. Process for fabricating a charge coupled device. United States.
Conder, Alan D., and Young, Bruce K. F. Tue . "Process for fabricating a charge coupled device". United States. https://www.osti.gov/servlets/purl/874916.
@article{osti_874916,
title = {Process for fabricating a charge coupled device},
author = {Conder, Alan D. and Young, Bruce K. F.},
abstractNote = {A monolithic three dimensional charged coupled device (3D-CCD) which utilizes the entire bulk of the semiconductor for charge generation, storage, and transfer. The 3D-CCD provides a vast improvement of current CCD architectures that use only the surface of the semiconductor substrate. The 3D-CCD is capable of developing a strong E-field throughout the depth of the semiconductor by using deep (buried) parallel (bulk) electrodes in the substrate material. Using backside illumination, the 3D-CCD architecture enables a single device to image photon energies from the visible, to the ultra-violet and soft x-ray, and out to higher energy x-rays of 30 keV and beyond. The buried or bulk electrodes are electrically connected to the surface electrodes, and an E-field parallel to the surface is established with the pixel in which the bulk electrodes are located. This E-field attracts charge to the bulk electrodes independent of depth and confines it within the pixel in which it is generated. Charge diffusion is greatly reduced because the E-field is strong due to the proximity of the bulk electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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