Coated semiconductor devices for neutron detection
Abstract
A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.
- Inventors:
-
- Bolingbrook, IL
- Whitmore Lake, MI
- Issue Date:
- Research Org.:
- EMRICH & DITHMAR
- OSTI Identifier:
- 874874
- Patent Number(s):
- 6479826
- Assignee:
- The United States of America as represented by the United States Department (Washington, DC)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01T - MEASUREMENT OF NUCLEAR OR X-RADIATION
- DOE Contract Number:
- AC02-98CH10913
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- coated; semiconductor; devices; neutron; detection; device; detecting; neutrons; semi-insulated; bulk; substrate; opposed; polished; surfaces; blocking; schottky; contact; comprised; series; metals; pd; formed; surface; resistivity; ohmic; embodiment; n-type; pinout; contacts; auge; based; eutectic; alloy; multi-layered; pdgetiau; disposed; reactive; film; coating; hydrogen; rich; polymer; polyolefin; paraffin; lithium; fluoride; heavy; metal; fissionable; material; varying; thickness; electrical; settings; specific; energies; detected; detector; capable; performing; real-time; radiography; gamma; fields; digital; fast; fissile; identification; basic; radiation; semiconductor device; metal fission; neutron detection; detecting neutron; /250/
Citation Formats
Klann, Raymond T, and McGregor, Douglas S. Coated semiconductor devices for neutron detection. United States: N. p., 2002.
Web.
Klann, Raymond T, & McGregor, Douglas S. Coated semiconductor devices for neutron detection. United States.
Klann, Raymond T, and McGregor, Douglas S. Tue .
"Coated semiconductor devices for neutron detection". United States. https://www.osti.gov/servlets/purl/874874.
@article{osti_874874,
title = {Coated semiconductor devices for neutron detection},
author = {Klann, Raymond T and McGregor, Douglas S},
abstractNote = {A device for detecting neutrons includes a semi-insulated bulk semiconductor substrate having opposed polished surfaces. A blocking Schottky contact comprised of a series of metals such as Ti, Pt, Au, Ge, Pd, and Ni is formed on a first polished surface of the semiconductor substrate, while a low resistivity ("ohmic") contact comprised of metals such as Au, Ge, and Ni is formed on a second, opposed polished surface of the substrate. In one embodiment, n-type low resistivity pinout contacts comprised of an Au/Ge based eutectic alloy or multi-layered Pd/Ge/Ti/Au are also formed on the opposed polished surfaces and in contact with the Schottky and ohmic contacts. Disposed on the Schottky contact is a neutron reactive film, or coating, for detecting neutrons. The coating is comprised of a hydrogen rich polymer, such as a polyolefin or paraffin; lithium or lithium fluoride; or a heavy metal fissionable material. By varying the coating thickness and electrical settings, neutrons at specific energies can be detected. The coated neutron detector is capable of performing real-time neutron radiography in high gamma fields, digital fast neutron radiography, fissile material identification, and basic neutron detection particularly in high radiation fields.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
Works referenced in this record:
Semi-insulating bulk GaAs as a semiconductor thermal-neutron imaging device
journal, October 1996
- McGregor, D. S.; Lindsay, J. T.; Brannon, C. C.
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 380, Issue 1-2