Purification and deposition of silicon by an iodide disproportionation reaction
Abstract
Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.
- Inventors:
-
- Littleton, CO
- Evergreen, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 874826
- Patent Number(s):
- 6468886
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC36-99GO10337
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- purification; deposition; silicon; iodide; disproportionation; reaction; method; apparatus; producing; purified; bulk; highly; impure; metallurgical-grade; source; material; atmospheric; pressure; involves; initially; reacting; iodine; create; tetraiodide; impurity; byproducts; cold-wall; reactor; chamber; isolating; purifying; distillation; transferring; additional; produce; diiodide; depositing; substrate; chambers; allow; introduction; remove; replace; finished; substrates; atmospheric pressure; bulk silicon; silicon source; grade silicon; pure metal; /438/
Citation Formats
Wang, Tihu, and Ciszek, Theodore F. Purification and deposition of silicon by an iodide disproportionation reaction. United States: N. p., 2002.
Web.
Wang, Tihu, & Ciszek, Theodore F. Purification and deposition of silicon by an iodide disproportionation reaction. United States.
Wang, Tihu, and Ciszek, Theodore F. Tue .
"Purification and deposition of silicon by an iodide disproportionation reaction". United States. https://www.osti.gov/servlets/purl/874826.
@article{osti_874826,
title = {Purification and deposition of silicon by an iodide disproportionation reaction},
author = {Wang, Tihu and Ciszek, Theodore F},
abstractNote = {Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}