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Title: Purification and deposition of silicon by an iodide disproportionation reaction

Abstract

Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

Inventors:
 [1];  [2]
  1. (Littleton, CO)
  2. (Evergreen, CO)
Issue Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
874826
Patent Number(s):
6468886
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
purification; deposition; silicon; iodide; disproportionation; reaction; method; apparatus; producing; purified; bulk; highly; impure; metallurgical-grade; source; material; atmospheric; pressure; involves; initially; reacting; iodine; create; tetraiodide; impurity; byproducts; cold-wall; reactor; chamber; isolating; purifying; distillation; transferring; additional; produce; diiodide; depositing; substrate; chambers; allow; introduction; remove; replace; finished; substrates; atmospheric pressure; bulk silicon; silicon source; grade silicon; pure metal; /438/

Citation Formats

Wang, Tihu, and Ciszek, Theodore F. Purification and deposition of silicon by an iodide disproportionation reaction. United States: N. p., 2002. Web.
Wang, Tihu, & Ciszek, Theodore F. Purification and deposition of silicon by an iodide disproportionation reaction. United States.
Wang, Tihu, and Ciszek, Theodore F. Tue . "Purification and deposition of silicon by an iodide disproportionation reaction". United States. https://www.osti.gov/servlets/purl/874826.
@article{osti_874826,
title = {Purification and deposition of silicon by an iodide disproportionation reaction},
author = {Wang, Tihu and Ciszek, Theodore F.},
abstractNote = {Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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