Semiconductor radiation detector
Abstract
A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.
- Inventors:
-
- Sherman Oaks, CA
- Los Angeles, CA
- Orinda, CA
- Westlake Village, CA
- Issue Date:
- Research Org.:
- Photon Imaging, Inc., Northridge, CA
- OSTI Identifier:
- 874763
- Patent Number(s):
- 6455858
- Assignee:
- Photon Imaging, Inc. (Northridge, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- FG03-97ER82450
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; radiation; detector; provided; detect; x-ray; light; photons; entrance; electrode; segmented; variable; doping; concentrations; physically; inserting; regions; individually; biased; elements; array; applying; potential; single; anode; collecting; created; charges; cathodes; inserts; placed; internal; resistor; divider; bias; polysilicon; spiral; guard; implemented; surrounding; active; electrodes; radiation detector; detector element; /250/257/
Citation Formats
Patt, Bradley E, Iwanczyk, Jan S, Tull, Carolyn R, and Vilkelis, Gintas. Semiconductor radiation detector. United States: N. p., 2002.
Web.
Patt, Bradley E, Iwanczyk, Jan S, Tull, Carolyn R, & Vilkelis, Gintas. Semiconductor radiation detector. United States.
Patt, Bradley E, Iwanczyk, Jan S, Tull, Carolyn R, and Vilkelis, Gintas. Tue .
"Semiconductor radiation detector". United States. https://www.osti.gov/servlets/purl/874763.
@article{osti_874763,
title = {Semiconductor radiation detector},
author = {Patt, Bradley E and Iwanczyk, Jan S and Tull, Carolyn R and Vilkelis, Gintas},
abstractNote = {A semiconductor radiation detector is provided to detect x-ray and light photons. The entrance electrode is segmented by using variable doping concentrations. Further, the entrance electrode is physically segmented by inserting n+ regions between p+ regions. The p+ regions and the n+ regions are individually biased. The detector elements can be used in an array, and the p+ regions and the n+ regions can be biased by applying potential at a single point. The back side of the semiconductor radiation detector has an n+ anode for collecting created charges and a number of p+ cathodes. Biased n+ inserts can be placed between the p+ cathodes, and an internal resistor divider can be used to bias the n+ inserts as well as the p+ cathodes. A polysilicon spiral guard can be implemented surrounding the active area of the entrance electrode or surrounding an array of entrance electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
Works referenced in this record:
New gamma-ray detector structures for electron only charge carrier collection utilizing high-Z compound semiconductors
journal, October 1996
- Patt, B. E.; Iwanczyk, J. S.; Vilkelis, G.
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 380, Issue 1-2
Large area silicon drift detectors for X-rays-new results
journal, June 1999
- Iwanczyk, J. S.; Patt, B. E.; Tull, C. R.
- IEEE Transactions on Nuclear Science, Vol. 46, Issue 3