Electrostatic particle trap for ion beam sputter deposition
Abstract
A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.
- Inventors:
-
- Pleasanton, CA
- Livermore, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 874733
- Patent Number(s):
- 6451176
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electrostatic; particle; trap; beam; sputter; deposition; method; apparatus; interception; trapping; reflection; charged; particulate; matter; generated; involves; generates; fields; vicinity; substrate; target; material; deposited; consists; array; electrode; surfaces; maintained; potential; parallel; perpendicular; surface; particles; achieved; generating; configuring; force; enables; prevention; enabling; extremely; defect; density; films; required; reflective; masks; extreme; ultraviolet; lithography; euvl; particulate material; charged particle; extreme ultraviolet; particulate matter; ultraviolet lithography; sputter deposit; /204/
Citation Formats
Vernon, Stephen P, and Burkhart, Scott C. Electrostatic particle trap for ion beam sputter deposition. United States: N. p., 2002.
Web.
Vernon, Stephen P, & Burkhart, Scott C. Electrostatic particle trap for ion beam sputter deposition. United States.
Vernon, Stephen P, and Burkhart, Scott C. Tue .
"Electrostatic particle trap for ion beam sputter deposition". United States. https://www.osti.gov/servlets/purl/874733.
@article{osti_874733,
title = {Electrostatic particle trap for ion beam sputter deposition},
author = {Vernon, Stephen P and Burkhart, Scott C},
abstractNote = {A method and apparatus for the interception and trapping of or reflection of charged particulate matter generated in ion beam sputter deposition. The apparatus involves an electrostatic particle trap which generates electrostatic fields in the vicinity of the substrate on which target material is being deposited. The electrostatic particle trap consists of an array of electrode surfaces, each maintained at an electrostatic potential, and with their surfaces parallel or perpendicular to the surface of the substrate. The method involves interception and trapping of or reflection of charged particles achieved by generating electrostatic fields in the vicinity of the substrate, and configuring the fields to force the charged particulate material away from the substrate. The electrostatic charged particle trap enables prevention of charged particles from being deposited on the substrate thereby enabling the deposition of extremely low defect density films, such as required for reflective masks of an extreme ultraviolet lithography (EUVL) system.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}