DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Field emission from bias-grown diamond thin films in a microwave plasma

Abstract

A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH.sub.4, C.sub.2 H.sub.2 other hydrocarbons and fullerenes.

Inventors:
 [1];  [2];  [3];  [4]
  1. Downers Grove, IL
  2. Naperville, IL
  3. Beijing, CN
  4. Bolinbrook, IL
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
OSTI Identifier:
874715
Patent Number(s):
6447851
Assignee:
The University of Chicago (Chicago, IL)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
field; emission; bias-grown; diamond; films; microwave; plasma; method; producing; negative; bias; established; substrate; electrically; conductive; surface; chemical; vapor; deposition; atmosphere; subjected; energy; source; carbon; nitrogen; hydrogen; maintained; nucleation; growth; phase; film; continuous; biases; -100v; -200; sources; chsub4; csub2; hsub2; hydrocarbons; fullerenes; electrically conductive; vapor deposition; chemical vapor; microwave energy; field emission; carbon source; microwave plasma; conductive surface; /427/

Citation Formats

Gruen, Dieter M, Krauss, Alan R, Ding, Ming Q, and Auciello, Orlando. Field emission from bias-grown diamond thin films in a microwave plasma. United States: N. p., 2002. Web.
Gruen, Dieter M, Krauss, Alan R, Ding, Ming Q, & Auciello, Orlando. Field emission from bias-grown diamond thin films in a microwave plasma. United States.
Gruen, Dieter M, Krauss, Alan R, Ding, Ming Q, and Auciello, Orlando. Tue . "Field emission from bias-grown diamond thin films in a microwave plasma". United States. https://www.osti.gov/servlets/purl/874715.
@article{osti_874715,
title = {Field emission from bias-grown diamond thin films in a microwave plasma},
author = {Gruen, Dieter M and Krauss, Alan R and Ding, Ming Q and Auciello, Orlando},
abstractNote = {A method of producing diamond or diamond like films in which a negative bias is established on a substrate with an electrically conductive surface in a microwave plasma chemical vapor deposition system. The atmosphere that is subjected to microwave energy includes a source of carbon, nitrogen and hydrogen. The negative bias is maintained on the substrate through both the nucleation and growth phase of the film until the film is continuous. Biases between -100V and -200 are preferred. Carbon sources may be one or more of CH.sub.4, C.sub.2 H.sub.2 other hydrocarbons and fullerenes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}

Works referenced in this record:

Combined effect of nitrogen and pulsed microwave plasma on diamond growth using CH4–CO2 gas mixture
journal, July 1998