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Title: Low thermal distortion extreme-UV lithography reticle

Abstract

Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.

Inventors:
 [1];  [2]
  1. Albuquerque, NM
  2. Livermore, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874689
Patent Number(s):
6441885
Assignee:
EUV LLC (Santa Clara, CA)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thermal; distortion; extreme-uv; lithography; reticle; reticles; masks; significantly; reduced; emissivity; engineering; selective; placement; omission; coatings; reflective; fabricated; exhibit; enhanced; heat; transfer; reducing; level; ultimately; improving; quality; transcription; pattern; wafer; substrate; active; region; defines; mask; non-active; regions; characterized; surface; coated; radiation; material; heat transfer; significantly reduce; extreme-uv lithography; thermal distortion; /355/378/430/

Citation Formats

Gianoulakis, Steven E, and Ray-Chaudhuri, Avijit K. Low thermal distortion extreme-UV lithography reticle. United States: N. p., 2002. Web.
Gianoulakis, Steven E, & Ray-Chaudhuri, Avijit K. Low thermal distortion extreme-UV lithography reticle. United States.
Gianoulakis, Steven E, and Ray-Chaudhuri, Avijit K. Tue . "Low thermal distortion extreme-UV lithography reticle". United States. https://www.osti.gov/servlets/purl/874689.
@article{osti_874689,
title = {Low thermal distortion extreme-UV lithography reticle},
author = {Gianoulakis, Steven E and Ray-Chaudhuri, Avijit K},
abstractNote = {Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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