Flat panel display using Ti-Cr-Al-O thin film
Abstract
Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.
- Inventors:
-
- Livermore, CA
- Solan Beach, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 874591
- Patent Number(s):
- 6420826
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- flat; panel; display; ti-cr-al-o; film; films; resistor; material; rf; sputter; deposited; ceramic; targets; reactive; gas; mixture; osub2; resistivity; values; 10sup4; 10sup10; ohm-cm; measured; <1; mum; thick; discretely; selected; control; target; composition; deposition; parameters; application; found; thermodynamically; stable; unlike; metal-oxide; vertical; lateral; example; layer; beneath; field; emission; cathode; surface; emissivity; coating; insulating; wall; supports; displays; gas mixture; field emission; panel display; rf sputter; resistivity values; resistor material; sputter deposit; /313/338/
Citation Formats
Jankowski, Alan F, and Schmid, Anthony P. Flat panel display using Ti-Cr-Al-O thin film. United States: N. p., 2002.
Web.
Jankowski, Alan F, & Schmid, Anthony P. Flat panel display using Ti-Cr-Al-O thin film. United States.
Jankowski, Alan F, and Schmid, Anthony P. Tue .
"Flat panel display using Ti-Cr-Al-O thin film". United States. https://www.osti.gov/servlets/purl/874591.
@article{osti_874591,
title = {Flat panel display using Ti-Cr-Al-O thin film},
author = {Jankowski, Alan F and Schmid, Anthony P},
abstractNote = {Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}