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Title: Flat panel display using Ti-Cr-Al-O thin film

Abstract

Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.

Inventors:
 [1];  [2]
  1. Livermore, CA
  2. Solan Beach, CA
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874591
Patent Number(s):
6420826
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
flat; panel; display; ti-cr-al-o; film; films; resistor; material; rf; sputter; deposited; ceramic; targets; reactive; gas; mixture; osub2; resistivity; values; 10sup4; 10sup10; ohm-cm; measured; <1; mum; thick; discretely; selected; control; target; composition; deposition; parameters; application; found; thermodynamically; stable; unlike; metal-oxide; vertical; lateral; example; layer; beneath; field; emission; cathode; surface; emissivity; coating; insulating; wall; supports; displays; gas mixture; field emission; panel display; rf sputter; resistivity values; resistor material; sputter deposit; /313/338/

Citation Formats

Jankowski, Alan F, and Schmid, Anthony P. Flat panel display using Ti-Cr-Al-O thin film. United States: N. p., 2002. Web.
Jankowski, Alan F, & Schmid, Anthony P. Flat panel display using Ti-Cr-Al-O thin film. United States.
Jankowski, Alan F, and Schmid, Anthony P. Tue . "Flat panel display using Ti-Cr-Al-O thin film". United States. https://www.osti.gov/servlets/purl/874591.
@article{osti_874591,
title = {Flat panel display using Ti-Cr-Al-O thin film},
author = {Jankowski, Alan F and Schmid, Anthony P},
abstractNote = {Thin films of Ti--Cr--Al--O are used as a resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O.sub.2. Resistivity values from 10.sup.4 to 10.sup.10 Ohm-cm have been measured for Ti--Cr--Al--O film <1 .mu.m thick. The film resistivity can be discretely selected through control of the target composition and the deposition parameters. The application of Ti--Cr--Al--O as a thin film resistor has been found to be thermodynamically stable, unlike other metal-oxide films. The Ti--Cr--Al--O film can be used as a vertical or lateral resistor, for example, as a layer beneath a field emission cathode in a flat panel display; or used to control surface emissivity, for example, as a coating on an insulating material such as vertical wall supports in flat panel displays.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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