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Title: Method and apparatus for monitoring plasma processing operations

Abstract

The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasmamore » step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.

Inventors:
 [1];  [2];  [3]
  1. (Albuquerque, NM)
  2. Albuquerque, NM
  3. Rio Rancho, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874579
Patent Number(s):
6419801
Application Number:
09/065358
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01J - MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; apparatus; monitoring; plasma; processing; operations; relates; aspects; process; specifically; processes; aspect; manner; calibrating; initializing; assembly; type; calibration; address; wavelength; shifts; intensity; associated; optical; emissions; data; obtained; light; directed; window; determine; effect; inner; surface; therethrough; operation; gathering; device; types; evaluations; undertaken; run; typically; currently; chamber; health; identification; analysis; included; endpoint; recipe; clean; conditioning; wafer; discretediscernible; portion; step; multiple; final; above-noted; implemented; semiconductor; fabrication; facility; distribution; wafers; production; plasma process; emissions data; discernible portion; /204/216/

Citation Formats

Smith, Jr., Michael Lane, Stevenson, Joel O'Don, and Ward, Pamela Peardon Denise. Method and apparatus for monitoring plasma processing operations. United States: N. p., 2002. Web.
Smith, Jr., Michael Lane, Stevenson, Joel O'Don, & Ward, Pamela Peardon Denise. Method and apparatus for monitoring plasma processing operations. United States.
Smith, Jr., Michael Lane, Stevenson, Joel O'Don, and Ward, Pamela Peardon Denise. Tue . "Method and apparatus for monitoring plasma processing operations". United States. https://www.osti.gov/servlets/purl/874579.
@article{osti_874579,
title = {Method and apparatus for monitoring plasma processing operations},
author = {Smith, Jr., Michael Lane and Stevenson, Joel O'Don and Ward, Pamela Peardon Denise},
abstractNote = {The invention generally relates to various aspects of a plasma process, and more specifically the monitoring of such plasma processes. One aspect relates in at least some manner to calibrating or initializing a plasma monitoring assembly. This type of calibration may be used to address wavelength shifts, intensity shifts, or both associated with optical emissions data obtained on a plasma process. A calibration light may be directed at a window through which optical emissions data is being obtained to determine the effect, if any, that the inner surface of the window is having on the optical emissions data being obtained therethrough, the operation of the optical emissions data gathering device, or both. Another aspect relates in at least some manner to various types of evaluations which may be undertaken of a plasma process which was run, and more typically one which is currently being run, within the processing chamber. Plasma health evaluations and process identification through optical emissions analysis are included in this aspect. Yet another aspect associated with the present invention relates in at least some manner to the endpoint of a plasma process (e.g., plasma recipe, plasma clean, conditioning wafer operation) or discrete/discernible portion thereof (e.g., a plasma step of a multiple step plasma recipe). A final aspect associated with the present invention relates to how one or more of the above-noted aspects may be implemented into a semiconductor fabrication facility, such as the distribution of wafers to a wafer production system.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {7}
}