n-Type diamond and method for producing same
Abstract
A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.
- Inventors:
-
- Oakland, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874558
- Patent Number(s):
- 6414338
- Assignee:
- Sandia National Laboratories (Livermore, CA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- n-type; diamond; method; producing; semiconducting; disclosed; doped; dopant; atoms; advantageously; formed; chemical; vapor; deposition; source; gas; mixture; comprising; carbon; compound; volatile; hot; wire; filament; impurity; species; formation; forming; usefully; employed; diamond-based; transistor; devices; pn; junctions; microelectronic; device; applications; vapor deposition; chemical vapor; gas mixture; device applications; source gas; type dopant; /257/
Citation Formats
Anderson, Richard J. n-Type diamond and method for producing same. United States: N. p., 2002.
Web.
Anderson, Richard J. n-Type diamond and method for producing same. United States.
Anderson, Richard J. Tue .
"n-Type diamond and method for producing same". United States. https://www.osti.gov/servlets/purl/874558.
@article{osti_874558,
title = {n-Type diamond and method for producing same},
author = {Anderson, Richard J},
abstractNote = {A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.