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Title: n-Type diamond and method for producing same

Abstract

A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

Inventors:
 [1]
  1. Oakland, CA
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874558
Patent Number(s):
6414338
Assignee:
Sandia National Laboratories (Livermore, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
n-type; diamond; method; producing; semiconducting; disclosed; doped; dopant; atoms; advantageously; formed; chemical; vapor; deposition; source; gas; mixture; comprising; carbon; compound; volatile; hot; wire; filament; impurity; species; formation; forming; usefully; employed; diamond-based; transistor; devices; pn; junctions; microelectronic; device; applications; vapor deposition; chemical vapor; gas mixture; device applications; source gas; type dopant; /257/

Citation Formats

Anderson, Richard J. n-Type diamond and method for producing same. United States: N. p., 2002. Web.
Anderson, Richard J. n-Type diamond and method for producing same. United States.
Anderson, Richard J. Tue . "n-Type diamond and method for producing same". United States. https://www.osti.gov/servlets/purl/874558.
@article{osti_874558,
title = {n-Type diamond and method for producing same},
author = {Anderson, Richard J},
abstractNote = {A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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