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Title: Semiconductor assisted metal deposition for nanolithography applications

Abstract

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

Inventors:
 [1];  [2];  [3];  [4];  [5];  [2]
  1. (Naperville, IL)
  2. (Downers Grove, IL)
  3. (Belgrade, YU)
  4. (West Brooklyn, IL)
  5. (Elmhurst, IL)
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
874543
Patent Number(s):
6410935
Assignee:
Argonne National Laboratory (Argonne, IL) ANL
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; assisted; metal; deposition; nanolithography; applications; article; manufacture; method; forming; nanoparticle; sized; material; components; oxide; substrate; nanoparticles; modifier; deposited; source; association; enabling; electronic; hole; scavenging; chelation; illuminated; reduction; particle size; metal deposition; oxide substrate; /257/438/

Citation Formats

Rajh, Tijana, Meshkov, Natalia, Nedelijkovic, Jovan M., Skubal, Laura R., Tiede, David M., and Thurnauer, Marion. Semiconductor assisted metal deposition for nanolithography applications. United States: N. p., 2002. Web.
Rajh, Tijana, Meshkov, Natalia, Nedelijkovic, Jovan M., Skubal, Laura R., Tiede, David M., & Thurnauer, Marion. Semiconductor assisted metal deposition for nanolithography applications. United States.
Rajh, Tijana, Meshkov, Natalia, Nedelijkovic, Jovan M., Skubal, Laura R., Tiede, David M., and Thurnauer, Marion. Tue . "Semiconductor assisted metal deposition for nanolithography applications". United States. https://www.osti.gov/servlets/purl/874543.
@article{osti_874543,
title = {Semiconductor assisted metal deposition for nanolithography applications},
author = {Rajh, Tijana and Meshkov, Natalia and Nedelijkovic, Jovan M. and Skubal, Laura R. and Tiede, David M. and Thurnauer, Marion},
abstractNote = {An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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