Thermally-induced voltage alteration for analysis of microelectromechanical devices
Abstract
A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.
- Inventors:
-
- Albuquerque, NM
- (Albuquerque, NM)
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874530
- Patent Number(s):
- 6407560
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thermally-induced; voltage; alteration; analysis; microelectromechanical; devices; tiva; apparatus; method; disclosed; analyzing; device; on-board; integrated; circuitry; embodiment; constant-current; biasing; scanning; focused; laser; beam; electrically-active; produce; localized; heating; alters; power; demand; changes; source; changing; measured; combination; position; scanned; generate; image; short-circuit; defects; due; stiction; fabrication; generated; directly; thermoelectric; potential; produced; location; supplying; formed; optical; microscope; applications; qualification; testing; failure; laser beam; integrated circuit; electric potential; mechanical device; electromechanical devices; microelectromechanical device; /324/
Citation Formats
Walraven, Jeremy A, and Cole, Jr., Edward I. Thermally-induced voltage alteration for analysis of microelectromechanical devices. United States: N. p., 2002.
Web.
Walraven, Jeremy A, & Cole, Jr., Edward I. Thermally-induced voltage alteration for analysis of microelectromechanical devices. United States.
Walraven, Jeremy A, and Cole, Jr., Edward I. Tue .
"Thermally-induced voltage alteration for analysis of microelectromechanical devices". United States. https://www.osti.gov/servlets/purl/874530.
@article{osti_874530,
title = {Thermally-induced voltage alteration for analysis of microelectromechanical devices},
author = {Walraven, Jeremy A and Cole, Jr., Edward I.},
abstractNote = {A thermally-induced voltage alteration (TIVA) apparatus and method are disclosed for analyzing a microelectromechanical (MEM) device with or without on-board integrated circuitry. One embodiment of the TIVA apparatus uses constant-current biasing of the MEM device while scanning a focused laser beam over electrically-active members therein to produce localized heating which alters the power demand of the MEM device and thereby changes the voltage of the constant-current source. This changing voltage of the constant-current source can be measured and used in combination with the position of the focused and scanned laser beam to generate an image of any short-circuit defects in the MEM device (e.g. due to stiction or fabrication defects). In another embodiment of the TIVA apparatus, an image can be generated directly from a thermoelectric potential produced by localized laser heating at the location of any short-circuit defects in the MEM device, without any need for supplying power to the MEM device. The TIVA apparatus can be formed, in part, from a scanning optical microscope, and has applications for qualification testing or failure analysis of MEM devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}
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