Structural tuning of residual conductivity in highly mismatched III-V layers
Abstract
A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874520
- Patent Number(s):
- 6406931
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- structural; tuning; residual; conductivity; highly; mismatched; iii-v; layers; process; control; electrical; gallium; nitride; grown; sapphire; substrate; developed; based; initially; coating; layer; aluminum; depositing; allows; controllably; produce; resistivity; varying; 10; magnitude; requiring; introduction; activation; dopants; electrical conductivity; gallium nitride; nitride layer; sapphire substrate; /438/
Citation Formats
Han, Jung, and Figiel, Jeffrey J. Structural tuning of residual conductivity in highly mismatched III-V layers. United States: N. p., 2002.
Web.
Han, Jung, & Figiel, Jeffrey J. Structural tuning of residual conductivity in highly mismatched III-V layers. United States.
Han, Jung, and Figiel, Jeffrey J. Tue .
"Structural tuning of residual conductivity in highly mismatched III-V layers". United States. https://www.osti.gov/servlets/purl/874520.
@article{osti_874520,
title = {Structural tuning of residual conductivity in highly mismatched III-V layers},
author = {Han, Jung and Figiel, Jeffrey J},
abstractNote = {A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
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Works referenced in this record:
Buffer layers for the growth of GaN on sapphire by molecular beam epitaxy
journal, May 1999
- Ebel, R.; Fehrer, M.; Figge, S.
- Journal of Crystal Growth, Vol. 201-202