Low thermal distortion Extreme-UV lithography reticle and method
Abstract
Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.
- Inventors:
-
- Albuquerque, NM
- Livermore, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874463
- Patent Number(s):
- 6395455
- Assignee:
- EUV LLC (Livermore, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- thermal; distortion; extreme-uv; lithography; reticle; method; reticles; masks; significantly; reduced; emissivity; engineering; selective; placement; omission; coatings; reflective; fabricated; exhibit; enhanced; heat; transfer; reducing; level; ultimately; improving; quality; transcription; pattern; wafer; substrate; active; region; defines; mask; non-active; regions; characterized; surface; coated; radiation; material; heat transfer; significantly reduce; extreme-uv lithography; thermal distortion; /430/
Citation Formats
Gianoulakis, Steven E, and Ray-Chaudhuri, Avijit K. Low thermal distortion Extreme-UV lithography reticle and method. United States: N. p., 2002.
Web.
Gianoulakis, Steven E, & Ray-Chaudhuri, Avijit K. Low thermal distortion Extreme-UV lithography reticle and method. United States.
Gianoulakis, Steven E, and Ray-Chaudhuri, Avijit K. Tue .
"Low thermal distortion Extreme-UV lithography reticle and method". United States. https://www.osti.gov/servlets/purl/874463.
@article{osti_874463,
title = {Low thermal distortion Extreme-UV lithography reticle and method},
author = {Gianoulakis, Steven E and Ray-Chaudhuri, Avijit K},
abstractNote = {Thermal distortion of reticles or masks can be significantly reduced by emissivity engineering, i.e., the selective placement or omission of coatings on the reticle. Reflective reticles so fabricated exhibit enhanced heat transfer thereby reducing the level of thermal distortion and ultimately improving the quality of the transcription of the reticle pattern onto the wafer. Reflective reticles include a substrate having an active region that defines the mask pattern and non-active region(s) that are characterized by a surface that has a higher emissivity than that of the active region. The non-active regions are not coated with the radiation reflective material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2002},
month = {Tue Jan 01 00:00:00 EST 2002}
}
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Works referenced in this record:
Thermal management of EUV lithography masks using low-expansion glass substrates
conference, June 1999
- Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.; Hector, Scott D.
- Microlithography '99, SPIE Proceedings
Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme-ultraviolet lithography
conference, June 1998
- Mirkarimi, Paul B.; Montcalm, Claude
- 23rd Annual International Symposium on Microlithography, SPIE Proceedings