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Title: Frequency-doubled vertical-external-cavity surface-emitting laser

Abstract

A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.

Inventors:
 [1];  [2];  [2];  [2]
  1. Edgewood, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
874452
Patent Number(s):
6393038
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
frequency-doubled; vertical-external-cavity; surface-emitting; laser; semiconductor; vecsel; disclosed; generating; light; wavelength; range; 300-550; nanometers; multi-quantum-well; active; region; electrically; optically; pumped; generate; lasing; fundamental; 600-1100; intracavity; nonlinear; frequency-doubling; crystal; converts; second-harmonic; output; beam; optical; pumping; 330; milliwatts; diode; pump; blue; generated; 490; nm; device; applications; high-density; data; storage; retrieval; printing; image; projection; chemical-sensing; materials; processing; metrology; data storage; surface-emitting laser; cavity surface; generating light; /372/

Citation Formats

Raymond, Thomas D, Alford, William J, Crawford, Mary H, and Allerman, Andrew A. Frequency-doubled vertical-external-cavity surface-emitting laser. United States: N. p., 2002. Web.
Raymond, Thomas D, Alford, William J, Crawford, Mary H, & Allerman, Andrew A. Frequency-doubled vertical-external-cavity surface-emitting laser. United States.
Raymond, Thomas D, Alford, William J, Crawford, Mary H, and Allerman, Andrew A. Tue . "Frequency-doubled vertical-external-cavity surface-emitting laser". United States. https://www.osti.gov/servlets/purl/874452.
@article{osti_874452,
title = {Frequency-doubled vertical-external-cavity surface-emitting laser},
author = {Raymond, Thomas D and Alford, William J and Crawford, Mary H and Allerman, Andrew A},
abstractNote = {A frequency-doubled semiconductor vertical-external-cavity surface-emitting laser (VECSEL) is disclosed for generating light at a wavelength in the range of 300-550 nanometers. The VECSEL includes a semiconductor multi-quantum-well active region that is electrically or optically pumped to generate lasing at a fundamental wavelength in the range of 600-1100 nanometers. An intracavity nonlinear frequency-doubling crystal then converts the fundamental lasing into a second-harmonic output beam. With optical pumping with 330 milliWatts from a semiconductor diode pump laser, about 5 milliWatts or more of blue light can be generated at 490 nm. The device has applications for high-density optical data storage and retrieval, laser printing, optical image projection, chemical-sensing, materials processing and optical metrology.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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Works referenced in this record:

Continuous‐wave operation of a blue vertical‐cavity surface‐emitting laser based on second‐harmonic generation
journal, April 1996


Second‐harmonic generation from GaAs/AlAs vertical cavity
journal, April 1995


Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser
journal, January 1999


Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
journal, January 1999


Blue light generation by resonator‐enhanced frequency doubling of an extended‐cavity diode laser
journal, August 1994


Second-Harmonic Generation in Vertical-Cavity Surface-Emitting Laser
journal, May 1996


High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams
journal, August 1997


High power continuous wave blue light generation in KNbO 3 using semiconductor amplifier seeded by a laser diode
journal, October 1993


Generation of 41 mW of blue radiation by frequency doubling of a GaAlAs diode laser
journal, June 1990


Surface‐emitted blue light from [112]‐oriented (In,Ga)As/GaAs quantum well edge‐emitting lasers
journal, November 1996


High-power diode-pumped AlGaAs surface-emitting laser
journal, January 1999