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Title: Group III-nitride thin films grown using MBE and bismuth

Abstract

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Inventors:
 [1];  [2]
  1. Piedmont, CA
  2. Berkeley, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
OSTI Identifier:
874382
Patent Number(s):
6379472
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
iii-nitride; films; grown; bismuth; growing; gallium; nitride; presence; temperatures; 1000; fabricated; inventive; fabrication; method; doped; magnesium; dopants; sapphire; substrates; hollow; anode; constricted; glow; discharge; nitrogen; plasma; source; surfactant; two-dimensional; crystal; sizes; ranging; 10; mum; 20; observed; 40; times; larger; similar; circumstances; increase; size; due; inducing; increased; surface; diffusion; coefficient; calculated; value; 47times10sup-7; cmsup2; reveals; virtual; substrate; temperature; 1258; 260; degrees; glow discharge; substrate temperature; nitride film; /148/117/

Citation Formats

Kisielowski, Christian K, and Rubin, Michael. Group III-nitride thin films grown using MBE and bismuth. United States: N. p., 2002. Web.
Kisielowski, Christian K, & Rubin, Michael. Group III-nitride thin films grown using MBE and bismuth. United States.
Kisielowski, Christian K, and Rubin, Michael. Tue . "Group III-nitride thin films grown using MBE and bismuth". United States. https://www.osti.gov/servlets/purl/874382.
@article{osti_874382,
title = {Group III-nitride thin films grown using MBE and bismuth},
author = {Kisielowski, Christian K and Rubin, Michael},
abstractNote = {The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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