Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
Abstract
A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.
- Inventors:
-
- Oakland, CA
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874336
- Patent Number(s):
- 6368942
- Assignee:
- EUV LLC (Santa Clara, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; fabricating; ultra-low; expansion; mask; blank; crystalline; silicon; layer; masks; extreme; ultraviolet; lithography; euvl; ule; substrates; required; thermal; management; blanks; defect; detection; classification; obtained; substrate; materials; provides; advantages; ultra-violet; euv; carried; bonding; wafer; thinning; produce; 5-10; mum; thick; surface; example; chemical; mechanical; polishing; oxidizing; followed; etching; thickness; extreme ultraviolet; silicon substrate; ultraviolet lithography; /438/378/430/
Citation Formats
Cardinale, Gregory F. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer. United States: N. p., 2002.
Web.
Cardinale, Gregory F. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer. United States.
Cardinale, Gregory F. Tue .
"Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer". United States. https://www.osti.gov/servlets/purl/874336.
@article{osti_874336,
title = {Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer},
author = {Cardinale, Gregory F},
abstractNote = {A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
Works referenced in this record:
Thermal management of EUV lithography masks using low-expansion glass substrates
conference, June 1999
- Gianoulakis, Steven E.; Ray-Chaudhuri, Avijit K.; Hector, Scott D.
- Microlithography '99, SPIE Proceedings
Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)
conference, December 1999
- Tong, William M.; Taylor, John S.; Hector, Scott D.
- Photomask Technology and Management, SPIE Proceedings
Thermal–mechanical performance of extreme ultraviolet lithographic reticles
journal, November 1998
- Gianoulakis, Steven E.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, Issue 6