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Title: Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

Abstract

A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

Inventors:
 [1]
  1. (Oakland, CA)
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
OSTI Identifier:
874336
Patent Number(s):
6368942
Assignee:
EUV LLC (Santa Clara, CA) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; fabricating; ultra-low; expansion; mask; blank; crystalline; silicon; layer; masks; extreme; ultraviolet; lithography; euvl; ule; substrates; required; thermal; management; blanks; defect; detection; classification; obtained; substrate; materials; provides; advantages; ultra-violet; euv; carried; bonding; wafer; thinning; produce; 5-10; mum; thick; surface; example; chemical; mechanical; polishing; oxidizing; followed; etching; thickness; extreme ultraviolet; silicon substrate; ultraviolet lithography; /438/378/430/

Citation Formats

Cardinale, Gregory F. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer. United States: N. p., 2002. Web.
Cardinale, Gregory F. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer. United States.
Cardinale, Gregory F. Tue . "Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer". United States. https://www.osti.gov/servlets/purl/874336.
@article{osti_874336,
title = {Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer},
author = {Cardinale, Gregory F.},
abstractNote = {A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

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