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Title: Method for preparing high temperature superconductor

Abstract

A method of depositing a biaxially textured metal oxide on a substrate defining a plane in which metal oxide atoms are vaporized from a source to form a plume of metal oxide atoms. Atoms in the plume disposed at a selected angle in a predetermined range of angles to the plane of the substrate are allowed to contact the substrate while preventing atoms outside a selected angle from reaching the substrate. The preferred range of angles is 40.degree.-70.degree. and the preferred angle is 60.degree..+-.5.degree.. A moving substrate is disclosed.

Inventors:
 [1];  [2]
  1. (Hinsdale, IL)
  2. (Beacon, NY)
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
874302
Patent Number(s):
6361598
Assignee:
The University of Chicago (Chicago, IL) ANL
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; preparing; temperature; superconductor; depositing; biaxially; textured; metal; oxide; substrate; defining; plane; atoms; vaporized; source; form; plume; disposed; selected; angle; predetermined; range; angles; allowed; contact; preventing; outside; reaching; 40degree-70degree; 60degree-5degree; moving; disclosed; metal oxide; biaxially textured; textured metal; /117/427/

Citation Formats

Balachandran, Uthamalingam, and Chudzik, Michael P. Method for preparing high temperature superconductor. United States: N. p., 2002. Web.
Balachandran, Uthamalingam, & Chudzik, Michael P. Method for preparing high temperature superconductor. United States.
Balachandran, Uthamalingam, and Chudzik, Michael P. Tue . "Method for preparing high temperature superconductor". United States. https://www.osti.gov/servlets/purl/874302.
@article{osti_874302,
title = {Method for preparing high temperature superconductor},
author = {Balachandran, Uthamalingam and Chudzik, Michael P.},
abstractNote = {A method of depositing a biaxially textured metal oxide on a substrate defining a plane in which metal oxide atoms are vaporized from a source to form a plume of metal oxide atoms. Atoms in the plume disposed at a selected angle in a predetermined range of angles to the plane of the substrate are allowed to contact the substrate while preventing atoms outside a selected angle from reaching the substrate. The preferred range of angles is 40.degree.-70.degree. and the preferred angle is 60.degree..+-.5.degree.. A moving substrate is disclosed.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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