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Title: Coatings on reflective mask substrates

Abstract

A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.

Inventors:
 [1];  [2];  [1];  [3];  [4];  [4];  [5]
  1. Oakland, CA
  2. Livermore, CA
  3. Gilbert, AZ
  4. San Jose, CA
  5. Austin, TX
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874264
Patent Number(s):
6352803
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
coatings; reflective; mask; substrates; process; creating; substrate; involving; depositing; coating; thermal; expansion; material; euvl; improve; defect; inspection; surface; finishing; levels; dielectric; backside; facilitate; electrostatic; chucking; correct; bowing; caused; stress; imbalance; imparted; deposited; multilayer; film; tasi; front; andor; balance; silicon; overlayer; conductive; underlayer; enables; improved; balancing; thermal expansion; surface finish; /430/428/

Citation Formats

Tong, William Man-Wai, Taylor, John S, Hector, Scott D, Mangat, Pawitter J. S., Stivers, Alan R, Kofron, Patrick G, and Thompson, Matthew A. Coatings on reflective mask substrates. United States: N. p., 2002. Web.
Tong, William Man-Wai, Taylor, John S, Hector, Scott D, Mangat, Pawitter J. S., Stivers, Alan R, Kofron, Patrick G, & Thompson, Matthew A. Coatings on reflective mask substrates. United States.
Tong, William Man-Wai, Taylor, John S, Hector, Scott D, Mangat, Pawitter J. S., Stivers, Alan R, Kofron, Patrick G, and Thompson, Matthew A. Tue . "Coatings on reflective mask substrates". United States. https://www.osti.gov/servlets/purl/874264.
@article{osti_874264,
title = {Coatings on reflective mask substrates},
author = {Tong, William Man-Wai and Taylor, John S and Hector, Scott D and Mangat, Pawitter J. S. and Stivers, Alan R and Kofron, Patrick G and Thompson, Matthew A},
abstractNote = {A process for creating a mask substrate involving depositing: 1) a coating on one or both sides of a low thermal expansion material EUVL mask substrate to improve defect inspection, surface finishing, and defect levels; and 2) a high dielectric coating, on the backside to facilitate electrostatic chucking and to correct for any bowing caused by the stress imbalance imparted by either other deposited coatings or the multilayer coating of the mask substrate. An film, such as TaSi, may be deposited on the front side and/or back of the low thermal expansion material before the material coating to balance the stress. The low thermal expansion material with a silicon overlayer and a silicon and/or other conductive underlayer enables improved defect inspection and stress balancing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Works referenced in this record:

Thermal management of EUV lithography masks using low-expansion glass substrates
conference, June 1999


Mask substrate requirements and development for extreme ultraviolet lithography (EUVL)
conference, December 1999


Thermal–mechanical performance of extreme ultraviolet lithographic reticles
journal, November 1998