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Title: Crystal growth and annealing for minimized residual stress

Abstract

A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.

Inventors:
 [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
874249
Patent Number(s):
6350310
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
crystal; growth; annealing; minimized; residual; stress; method; apparatus; producing; crystals; minimizes; birefringence; sizes; production; cafsub2; maintaining; minimal; temperature; gradient; slowly; reducing; bulk; thermal; control; added; allows; residual stress; /117/

Citation Formats

Gianoulakis, Steven E. Crystal growth and annealing for minimized residual stress. United States: N. p., 2002. Web.
Gianoulakis, Steven E. Crystal growth and annealing for minimized residual stress. United States.
Gianoulakis, Steven E. Tue . "Crystal growth and annealing for minimized residual stress". United States. https://www.osti.gov/servlets/purl/874249.
@article{osti_874249,
title = {Crystal growth and annealing for minimized residual stress},
author = {Gianoulakis, Steven E.},
abstractNote = {A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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