Crystal growth and annealing for minimized residual stress
Abstract
A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 874249
- Patent Number(s):
- 6350310
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- crystal; growth; annealing; minimized; residual; stress; method; apparatus; producing; crystals; minimizes; birefringence; sizes; production; cafsub2; maintaining; minimal; temperature; gradient; slowly; reducing; bulk; thermal; control; added; allows; residual stress; /117/
Citation Formats
Gianoulakis, Steven E. Crystal growth and annealing for minimized residual stress. United States: N. p., 2002.
Web.
Gianoulakis, Steven E. Crystal growth and annealing for minimized residual stress. United States.
Gianoulakis, Steven E. Tue .
"Crystal growth and annealing for minimized residual stress". United States. https://www.osti.gov/servlets/purl/874249.
@article{osti_874249,
title = {Crystal growth and annealing for minimized residual stress},
author = {Gianoulakis, Steven E},
abstractNote = {A method and apparatus for producing crystals that minimizes birefringence even at large crystal sizes, and is suitable for production of CaF.sub.2 crystals. The method of the present invention comprises annealing a crystal by maintaining a minimal temperature gradient in the crystal while slowly reducing the bulk temperature of the crystal. An apparatus according to the present invention includes a thermal control system added to a crystal growth and annealing apparatus, wherein the thermal control system allows a temperature gradient during crystal growth but minimizes the temperature gradient during crystal annealing.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
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Works referenced in this record:
Lithography with 157 nm lasers
journal, November 1997
- Bloomstein, T. M.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, Issue 6