Electroless epitaxial etching for semiconductor applications
Abstract
A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.
- Inventors:
-
- Menlo Park, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 874236
- Patent Number(s):
- 6346461
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electroless; epitaxial; etching; semiconductor; applications; method; fabricating; thin-film; single-crystal; silicon; insulator; substrates; achieving; efficient; etch; stopping; microelectric; circuits; devices; prepared; wafers; standard; fabrication; facility; bonded; holding; substrate; bulk; removed; leaving; circuit; contained; layer; remaining; photolithographic; operation; performed; define; streets; wire; bond; pad; electrical; access; silicon substrate; crystal silicon; etch stop; insulator substrate; single-crystal silicon; epitaxial silicon; /438/
Citation Formats
McCarthy, Anthony M. Electroless epitaxial etching for semiconductor applications. United States: N. p., 2002.
Web.
McCarthy, Anthony M. Electroless epitaxial etching for semiconductor applications. United States.
McCarthy, Anthony M. Tue .
"Electroless epitaxial etching for semiconductor applications". United States. https://www.osti.gov/servlets/purl/874236.
@article{osti_874236,
title = {Electroless epitaxial etching for semiconductor applications},
author = {McCarthy, Anthony M},
abstractNote = {A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}
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