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Title: Electroless epitaxial etching for semiconductor applications

Abstract

A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

Inventors:
 [1]
  1. (Menlo Park, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874236
Patent Number(s):
6346461
Assignee:
The Regents of the University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
electroless; epitaxial; etching; semiconductor; applications; method; fabricating; thin-film; single-crystal; silicon; insulator; substrates; achieving; efficient; etch; stopping; microelectric; circuits; devices; prepared; wafers; standard; fabrication; facility; bonded; holding; substrate; bulk; removed; leaving; circuit; contained; layer; remaining; photolithographic; operation; performed; define; streets; wire; bond; pad; electrical; access; silicon substrate; crystal silicon; etch stop; insulator substrate; single-crystal silicon; epitaxial silicon; /438/

Citation Formats

McCarthy, Anthony M. Electroless epitaxial etching for semiconductor applications. United States: N. p., 2002. Web.
McCarthy, Anthony M. Electroless epitaxial etching for semiconductor applications. United States.
McCarthy, Anthony M. Tue . "Electroless epitaxial etching for semiconductor applications". United States. https://www.osti.gov/servlets/purl/874236.
@article{osti_874236,
title = {Electroless epitaxial etching for semiconductor applications},
author = {McCarthy, Anthony M.},
abstractNote = {A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

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