skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for forming a barrier layer

Abstract

Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).

Inventors:
 [1];  [2]
  1. Baltimore, MD
  2. (Palo Alto, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
874201
Patent Number(s):
6339020
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; forming; barrier; layer; cubic; metastable; refractory; metal; carbides; layers; isolate; adhere; passivate; copper; semiconductor; fabrication; carbide; deposited; conjunction; metallizations; form; multilayer; characterized; crystal; structure; strong; 100; texture; materials; transition; vanadium; vc; niobium; nbc; tantalum; tac; chromium; crsub3; csub2; tungsten; wc; molybdenum; moc; transition metal; semiconductor fabrication; metal carbide; /438/257/

Citation Formats

Weihs, Timothy P, and Barbee, Jr., Troy W. Method for forming a barrier layer. United States: N. p., 2002. Web.
Weihs, Timothy P, & Barbee, Jr., Troy W. Method for forming a barrier layer. United States.
Weihs, Timothy P, and Barbee, Jr., Troy W. Tue . "Method for forming a barrier layer". United States. https://www.osti.gov/servlets/purl/874201.
@article{osti_874201,
title = {Method for forming a barrier layer},
author = {Weihs, Timothy P and Barbee, Jr., Troy W.},
abstractNote = {Cubic or metastable cubic refractory metal carbides act as barrier layers to isolate, adhere, and passivate copper in semiconductor fabrication. One or more barrier layers of the metal carbide are deposited in conjunction with copper metallizations to form a multilayer characterized by a cubic crystal structure with a strong (100) texture. Suitable barrier layer materials include refractory transition metal carbides such as vanadium carbide (VC), niobium carbide (NbC), tantalum carbide (TaC), chromium carbide (Cr.sub.3 C.sub.2), tungsten carbide (WC), and molybdenum carbide (MoC).},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2002},
month = {1}
}

Patent:

Save / Share: