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Title: Oriented conductive oxide electrodes on SiO2/Si and glass

Abstract

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Inventors:
 [1];  [1]
  1. (Los Alamos, NM)
Issue Date:
Research Org.:
Los Alamos National Laboratory (LANL), Los Alamos, NM
OSTI Identifier:
874103
Patent Number(s):
6312819
Assignee:
The Regents of the University of California (Los Alamos, NM) LANL
DOE Contract Number:  
W-7405-ENG-36
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
oriented; conductive; oxide; electrodes; sio2si; glass; film; structure; provided; including; silicon; substrate; layer; dioxide; surface; cubic; material; deposited; ion-beam-assisted-deposition; characterized; biaxially; yttria-stabilized; zirconia; additional; layers; ruthenium; lanthanum; strontium; cobalt; intermediate; cerium; employed; barium; titanium; method; forming; structures; temperature; deposition; dioxidesilicon; oxide layer; silicon substrate; conductive oxide; oxide electrode; /428/117/

Citation Formats

Jia, Quanxi, and Arendt, Paul N. Oriented conductive oxide electrodes on SiO2/Si and glass. United States: N. p., 2001. Web.
Jia, Quanxi, & Arendt, Paul N. Oriented conductive oxide electrodes on SiO2/Si and glass. United States.
Jia, Quanxi, and Arendt, Paul N. Mon . "Oriented conductive oxide electrodes on SiO2/Si and glass". United States. https://www.osti.gov/servlets/purl/874103.
@article{osti_874103,
title = {Oriented conductive oxide electrodes on SiO2/Si and glass},
author = {Jia, Quanxi and Arendt, Paul N.},
abstractNote = {A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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