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Title: Control method and system for use when growing thin-films on semiconductor-based materials

Abstract

A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.

Inventors:
 [1];  [2]
  1. (Kingston, TN)
  2. (Oak Ridge, TN)
Issue Date:
Research Org.:
LOCKHEED MARTIN ENERGY RES COR
OSTI Identifier:
874072
Patent Number(s):
6306668
Assignee:
UT-Battelle, LLC (Oak Ridge, TN) ORNL
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
control; method; growing; thin-films; semiconductor-based; materials; process; growth; film; surface; substrate; exposing; vaporized; material; vacuum; hv; facility; involves; directing; electron; beam; exposed; electrons; diffracted; monitoring; pattern; settles; monitored; achieves; condition; indicative; grown; exposure; shut; otherwise; adjusted; facilitate; adjustment; crystallographic; orientation; mechanism; altering; electron beam; substrate surface; control method; semiconductor-based material; vaporized material; /438/117/

Citation Formats

McKee, Rodney A., and Walker, Frederick J. Control method and system for use when growing thin-films on semiconductor-based materials. United States: N. p., 2001. Web.
McKee, Rodney A., & Walker, Frederick J. Control method and system for use when growing thin-films on semiconductor-based materials. United States.
McKee, Rodney A., and Walker, Frederick J. Mon . "Control method and system for use when growing thin-films on semiconductor-based materials". United States. https://www.osti.gov/servlets/purl/874072.
@article{osti_874072,
title = {Control method and system for use when growing thin-films on semiconductor-based materials},
author = {McKee, Rodney A. and Walker, Frederick J.},
abstractNote = {A process and system for use during the growth of a thin film upon the surface of a substrate by exposing the substrate surface to vaporized material in a high vacuum (HV) facility involves the directing of an electron beam generally toward the surface of the substrate as the substrate is exposed to vaporized material so that electrons are diffracted from the substrate surface by the beam and the monitoring of the pattern of electrons diffracted from the substrate surface as vaporized material settles upon the substrate surface. When the monitored pattern achieves a condition indicative of the desired condition of the thin film being grown upon the substrate, the exposure of the substrate to the vaporized materials is shut off or otherwise adjusted. To facilitate the adjustment of the crystallographic orientation of the film relative to the electron beam, the system includes a mechanism for altering the orientation of the surface of the substrate relative to the electron beam.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Patent:

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