DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

Abstract

The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

Inventors:
 [1];  [2]
  1. Oak Ridge, TN
  2. Bloomington, MN
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
874024
Patent Number(s):
6296701
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; depositing; electrically; conductive; oxide; film; textured; metallic; substrate; articles; formed; therefrom; provides; biaxially; laminate; article; polycrystalline; layer; epitaxially; deposited; thereon; methods; producing; embodiment; texture; lanio; initial; buffer; sputtering; technique; gas; inert; forming; subsequent; comprising; oxygen; enable; formation; devices; wires; interconnects; length; ferromagnetic; ferroelectric; memory; flexible; light; emitting; semiconductors; tapes; electrodes; memory device; formed therefrom; forming gas; conductive oxide; epitaxially deposited; biaxially textured; electrically conductive; oxide layer; deposited thereon; oxide film; light emitting; gas comprising; metallic substrate; textured metallic; textured metal; sputtering gas; oxide buffer; ferroelectric memory; articles formed; laminate article; emitting semiconductor; /117/505/

Citation Formats

Christen, David K, and He, Qing. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom. United States: N. p., 2001. Web.
Christen, David K, & He, Qing. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom. United States.
Christen, David K, and He, Qing. Mon . "Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom". United States. https://www.osti.gov/servlets/purl/874024.
@article{osti_874024,
title = {Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom},
author = {Christen, David K and He, Qing},
abstractNote = {The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

Works referenced in this record:

In‐plane epitaxial alignment of YBa 2 Cu 3 O 7− x films grown on silver crystals and buffer layers
journal, April 1993


Epitaxial YBa 2 Cu 3 O 7−δ thin films on SrRuO 3 /Pt/MgO
journal, January 1994


High‐field critical current densities in Bi 2 Sr 2 Ca 1 Cu 2 O 8+ x /Ag wires
journal, December 1989


Preparation of Y‐Ba‐Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material
journal, August 1987


Synthesis of PbTiO3 film on LaNiO3-coated substrate by the spray-ICP technique
journal, October 1994


Preparation of high quality YBa/sub 2/Cu/sub 3/O/sub 7-δ/ thick films on flexible Ni-based alloy substrates with textured buffer layers
journal, June 1995


Metal buffer layers and Y‐Ba‐Cu‐O thin films on Pt and stainless steel using pulsed laser deposition
journal, August 1990


High critical current densities in Bi(2223)/Ag tapes
journal, January 1992


a ‐axis oriented epitaxial YBa 2 Cu 3 O 7− x ‐PrBa 2 Cu 3 O 7− y heterostructures
journal, December 1990


LaNiO/sub 3/: a promising material for contact with YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films
journal, January 1995


High critical current density superconducting tapes by epitaxial deposition of YBa2Cu3Ox thick films on biaxially textured metals
journal, September 1996


High-J/sub c/ silver-sheathed Bi-based superconducting wires
journal, March 1991


Growth of biaxially textured buffer layers on rolled-Ni substrates by electron beam evaporation
journal, February 1997


Growth of C-axis oriented YBaCuO films on oxidized textured Ni sheets and on
journal, March 1991


Superconducting YBa 2 Cu 3 O 6.8 films on metallic substrates using in situ laser deposition
journal, June 1990