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Title: Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom

Abstract

The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.

Inventors:
 [1];  [2]
  1. Oak Ridge, TN
  2. Bloomington, MN
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
874024
Patent Number(s):
6296701
Assignee:
UT-Battelle, LLC (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; depositing; electrically; conductive; oxide; film; textured; metallic; substrate; articles; formed; therefrom; provides; biaxially; laminate; article; polycrystalline; layer; epitaxially; deposited; thereon; methods; producing; embodiment; texture; lanio; initial; buffer; sputtering; technique; gas; inert; forming; subsequent; comprising; oxygen; enable; formation; devices; wires; interconnects; length; ferromagnetic; ferroelectric; memory; flexible; light; emitting; semiconductors; tapes; electrodes; memory device; formed therefrom; forming gas; conductive oxide; epitaxially deposited; biaxially textured; electrically conductive; oxide layer; deposited thereon; oxide film; light emitting; gas comprising; metallic substrate; textured metallic; textured metal; sputtering gas; oxide buffer; ferroelectric memory; articles formed; laminate article; emitting semiconductor; /117/505/

Citation Formats

Christen, David K, and He, Qing. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom. United States: N. p., 2001. Web.
Christen, David K, & He, Qing. Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom. United States.
Christen, David K, and He, Qing. Mon . "Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom". United States. https://www.osti.gov/servlets/purl/874024.
@article{osti_874024,
title = {Method of depositing an electrically conductive oxide film on a textured metallic substrate and articles formed therefrom},
author = {Christen, David K and He, Qing},
abstractNote = {The present invention provides a biaxially textured laminate article having a polycrystalline biaxially textured metallic substrate with an electrically conductive oxide layer epitaxially deposited thereon and methods for producing same. In one embodiment a biaxially texture Ni substrate has a layer of LaNiO.sub.3 deposited thereon. An initial layer of electrically conductive oxide buffer is epitaxially deposited using a sputtering technique using a sputtering gas which is an inert or forming gas. A subsequent layer of an electrically conductive oxide layer is then epitaxially deposited onto the initial layer using a sputtering gas comprising oxygen. The present invention will enable the formation of biaxially textured devices which include HTS wires and interconnects, large area or long length ferromagnetic and/or ferroelectric memory devices, large area or long length, flexible light emitting semiconductors, ferroelectric tapes, and electrodes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

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