Method for ion implantation induced embedded particle formation via reduction
Abstract
A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.
- Inventors:
-
- Decatur, GA
- Atlanta, GA
- Issue Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- OSTI Identifier:
- 874013
- Patent Number(s):
- 6294223
- Assignee:
- Georgia Tech Research Corp. (Atlanta, GA)
- Patent Classifications (CPCs):
-
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
- DOE Contract Number:
- AC05-96OR22464
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; implantation; induced; embedded; particle; formation; via; reduction; steps; element; chemically; reduce; chosen; substrate; material; sufficient; concentration; energy; control; temperature; preferred; embodiment; particles; nano-dimensional; 100; m-n; size; phase; affected; process; chemically reduce; particle formation; particle form; sufficient energy; substrate material; preferred embodiment; substrate temperature; sufficient concentration; chosen substrate; implantation process; rate temperature; via reduction; formation via; induced embedded; implantation induced; embedded particle; /427/
Citation Formats
Hampikian, Janet M, and Hunt, Eden M. Method for ion implantation induced embedded particle formation via reduction. United States: N. p., 2001.
Web.
Hampikian, Janet M, & Hunt, Eden M. Method for ion implantation induced embedded particle formation via reduction. United States.
Hampikian, Janet M, and Hunt, Eden M. Mon .
"Method for ion implantation induced embedded particle formation via reduction". United States. https://www.osti.gov/servlets/purl/874013.
@article{osti_874013,
title = {Method for ion implantation induced embedded particle formation via reduction},
author = {Hampikian, Janet M and Hunt, Eden M},
abstractNote = {A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 2001},
month = {Mon Jan 01 00:00:00 EST 2001}
}
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