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Title: Method for ion implantation induced embedded particle formation via reduction

Abstract

A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.

Inventors:
 [1];  [2]
  1. Decatur, GA
  2. Atlanta, GA
Issue Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
874013
Patent Number(s):
6294223
Assignee:
Georgia Tech Research Corp. (Atlanta, GA)
Patent Classifications (CPCs):
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
DOE Contract Number:  
AC05-96OR22464
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; implantation; induced; embedded; particle; formation; via; reduction; steps; element; chemically; reduce; chosen; substrate; material; sufficient; concentration; energy; control; temperature; preferred; embodiment; particles; nano-dimensional; 100; m-n; size; phase; affected; process; chemically reduce; particle formation; particle form; sufficient energy; substrate material; preferred embodiment; substrate temperature; sufficient concentration; chosen substrate; implantation process; rate temperature; via reduction; formation via; induced embedded; implantation induced; embedded particle; /427/

Citation Formats

Hampikian, Janet M, and Hunt, Eden M. Method for ion implantation induced embedded particle formation via reduction. United States: N. p., 2001. Web.
Hampikian, Janet M, & Hunt, Eden M. Method for ion implantation induced embedded particle formation via reduction. United States.
Hampikian, Janet M, and Hunt, Eden M. Mon . "Method for ion implantation induced embedded particle formation via reduction". United States. https://www.osti.gov/servlets/purl/874013.
@article{osti_874013,
title = {Method for ion implantation induced embedded particle formation via reduction},
author = {Hampikian, Janet M and Hunt, Eden M},
abstractNote = {A method for ion implantation induced embedded particle formation via reduction with the steps of ion implantation with an ion/element that will chemically reduce the chosen substrate material, implantation of the ion/element to a sufficient concentration and at a sufficient energy for particle formation, and control of the temperature of the substrate during implantation. A preferred embodiment includes the formation of particles which are nano-dimensional (<100 m-n in size). The phase of the particles may be affected by control of the substrate temperature during and/or after the ion implantation process.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {2001},
month = {1}
}

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Works referenced in this record:

Ion Beam Synthesis of Luminescent SI and GE Nanocrystals in a Silicon Dioxide Matrix
journal, January 1993


Thermal annealing behavior of ion-implanted silica glass
journal, October 1993


Analytical electron microscopy of Al2O3 implanted with iron ions
journal, January 1992


Precipitation phenomena in high-dose iron-implanted silica and annealing behavior
journal, December 1987


Silver Cluster Formation in Implanted A1 2 O 3 Single Crystals
journal, January 1995


Formation of amorphous layers in Al2O3 by ion implantation
journal, March 1985


Microstructural development in the near-surface region during thermal annealing of Al 2 O 3 implanted with cationic impurities
journal, July 1990


Picosecond nonlinear optical response of a Cu:silica nanocluster composite
journal, January 1993


Recrystallization‐driven migration of implanted ions in sapphire and resultant‐oriented precipitation
journal, August 1986